Datasheet MRF8P29300HR6, MRF8P29300HSR6 (NXP) - 7
| Fabricante | NXP |
| Descripción | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| Páginas / Página | 16 / 7 — TYPICAL CHARACTERISTICS. Figure 12. MTTF versus Junction Temperature. … |
| Formato / tamaño de archivo | PDF / 1.1 Mb |
| Idioma del documento | Inglés |
TYPICAL CHARACTERISTICS. Figure 12. MTTF versus Junction Temperature. MRF8P29300HR6 MRF8P29300HSR6
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MRF8P29300H
MRF8P29300HS
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TYPICAL CHARACTERISTICS
109 108 RS) 107 (HOU 106 MTTF 105 104 90 11 1 0 1 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 30 Vdc, Pout = 320 W Peak, Pulse Width = 300 μsec, Duty Cycle = 10%, and ηD = 45%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 12. MTTF versus Junction Temperature MRF8P29300HR6 MRF8P29300HSR6
RF Device Data Freescale Semiconductor 7
109 108 RS) 107 (HOU 106 MTTF 105 104 90 11 1 0 1 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 30 Vdc, Pout = 320 W Peak, Pulse Width = 300 μsec, Duty Cycle = 10%, and ηD = 45%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 12. MTTF versus Junction Temperature MRF8P29300HR6 MRF8P29300HSR6
RF Device Data Freescale Semiconductor 7