Datasheet MRF8P29300HR6, MRF8P29300HSR6 (NXP)
| Fabricante | NXP |
| Descripción | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| Páginas / Página | 16 / 1 — Freescale Semiconductor. RF Power Field Effect Transistors. … |
| Formato / tamaño de archivo | PDF / 1.1 Mb |
| Idioma del documento | Inglés |
Freescale Semiconductor. RF Power Field Effect Transistors. MRF8P29300HR6. MRF8P29300HSR6. 2700- 2900 MHz, 320 W, 30 V. out. Gps. IRL
Línea de modelo para esta hoja de datos
MRF8P29300H
MRF8P29300HS
Versión de texto del documento
Freescale Semiconductor
Document Number: MRF8P29300H Rev. 0, 2/2011 Technical Data
RF Power Field Effect Transistors
N- Channel Enhancement- Mode Lateral MOSFETs
MRF8P29300HR6
RF Power transistors designed for applications operating at frequencies
MRF8P29300HSR6
between 2700 and 2900 MHz. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 30 Volts, IDQ = 100 mA
P 2700- 2900 MHz, 320 W, 30 V out f Gps
η
D IRL Signal Type (W) (MHz) (dB) (%) (dB) LATERAL N- CHANNEL BROADBAND
Pulsed (100 μsec, 320 Peak 2900 13.3 50.5 - 17
RF POWER MOSFETs
10% Duty Cycle) • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2900 MHz, 320 Watts Peak Power, 300 μsec, 10% Duty Cycle (3 dB Input Overdrive from Rated Pout)
Features
• Characterized with Series Equivalent Large- Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation
CASE 375D- 05, STYLE 1
• Integrated ESD Protection
NI- 1230
• Designed for Push- Pull Operation
MRF8P29300HR6
• Greater Negative Gate- Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 15.
CASE 375E- 04, STYLE 1 NI- 1230S MRF8P29300HSR6 PARTS ARE PUSH- PULL
RFinA/VGSA 3 1 RF
Table 1. Maximum Ratings
outA/VDSA
Rating Symbol Value Unit
Drain- Source Voltage VDSS - 0.5, +65 Vdc RFinB/VGSB 4 2 RFoutB/VDSB Gate- Source Voltage VGS - 6.0, +10 Vdc Storage Temperature Range Tstg - 65 to +150 °C (Top View) Case Operating Temperature TC 150 °C Operating Junction Temperature
(1,2)
T
Figure 1. Pin Connections
J 225 °C
Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case ZθJC °C/W Case Temperature 61°C, 320 W Pulsed, 300 μsec Pulse Width, 10% Duty Cycle, 100 mA, 2900 MHz 0.06 Case Temperature 69°C, 320 W Pulsed, 500 μsec Pulse Width, 20% Duty Cycle, 100 mA, 2900 MHz 0.10 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2011. Al rights reserved.
MRF8P29300HR6 MRF8P29300HSR6
RF Device Data Freescale Semiconductor 1
Document Number: MRF8P29300H Rev. 0, 2/2011 Technical Data
RF Power Field Effect Transistors
N- Channel Enhancement- Mode Lateral MOSFETs
MRF8P29300HR6
RF Power transistors designed for applications operating at frequencies
MRF8P29300HSR6
between 2700 and 2900 MHz. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 30 Volts, IDQ = 100 mA
P 2700- 2900 MHz, 320 W, 30 V out f Gps
η
D IRL Signal Type (W) (MHz) (dB) (%) (dB) LATERAL N- CHANNEL BROADBAND
Pulsed (100 μsec, 320 Peak 2900 13.3 50.5 - 17
RF POWER MOSFETs
10% Duty Cycle) • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2900 MHz, 320 Watts Peak Power, 300 μsec, 10% Duty Cycle (3 dB Input Overdrive from Rated Pout)
Features
• Characterized with Series Equivalent Large- Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation
CASE 375D- 05, STYLE 1
• Integrated ESD Protection
NI- 1230
• Designed for Push- Pull Operation
MRF8P29300HR6
• Greater Negative Gate- Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 15.
CASE 375E- 04, STYLE 1 NI- 1230S MRF8P29300HSR6 PARTS ARE PUSH- PULL
RFinA/VGSA 3 1 RF
Table 1. Maximum Ratings
outA/VDSA
Rating Symbol Value Unit
Drain- Source Voltage VDSS - 0.5, +65 Vdc RFinB/VGSB 4 2 RFoutB/VDSB Gate- Source Voltage VGS - 6.0, +10 Vdc Storage Temperature Range Tstg - 65 to +150 °C (Top View) Case Operating Temperature TC 150 °C Operating Junction Temperature
(1,2)
T
Figure 1. Pin Connections
J 225 °C
Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case ZθJC °C/W Case Temperature 61°C, 320 W Pulsed, 300 μsec Pulse Width, 10% Duty Cycle, 100 mA, 2900 MHz 0.06 Case Temperature 69°C, 320 W Pulsed, 500 μsec Pulse Width, 20% Duty Cycle, 100 mA, 2900 MHz 0.10 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2011. Al rights reserved.
MRF8P29300HR6 MRF8P29300HSR6
RF Device Data Freescale Semiconductor 1