Datasheet MRF8P29300HR6, MRF8P29300HSR6 (NXP) - 5
| Fabricante | NXP |
| Descripción | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| Páginas / Página | 16 / 5 — TYPICAL CHARACTERISTICS. Note:. Figure 4. Capacitance versus Drain- … |
| Formato / tamaño de archivo | PDF / 1.1 Mb |
| Idioma del documento | Inglés |
TYPICAL CHARACTERISTICS. Note:. Figure 4. Capacitance versus Drain- Source Voltage. Figure 5. Pulsed Output Power versus
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MRF8P29300H
MRF8P29300HS
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TYPICAL CHARACTERISTICS
1000 Coss 60 Ideal C 59 P3dB = 55.16 dBm (328 W) iss 58 (pF 100 P2dB = 54.82 dBm (303 W) (dBm) 57 ANCE Measured with ±30 mV(rms)ac @ 1 MHz 56 P1dB = 54.19 dBm (263 W) Actual PACIT VGS = 0 Vdc POWER 55 CA 10 T C, 54 UTPU 53 ,O Crss P out 52 1 51 VDD = 30 Vdc, IDQ = 100 mA, f = 2900 MHz 0 4 8 12 16 20 24 28 32 Pulse Width = 300 μsec, Duty Cycle = 10% 50 VDS, DRAIN- SOURCE VOLTAGE (VOLTS) 35 36 37 38 39 40 41 42 43 44 45
Note:
Each side of device measured separately
.
Pin, INPUT POWER (dBm) PULSED
Figure 4. Capacitance versus Drain- Source Voltage Figure 5. Pulsed Output Power versus Input Power
15 55 16 IDQ=100mA,f=2900MHz 14.5 50 Pulse Width = 300 μsec G 15 ps ) Duty Cycle = 10% B) 14 45 (% B) (d NCY (d 14 GAIN 13.5 40 GAIN ηD 13 13 35 EFFICIE IN 32 V ,POWER VDD = 30 Vdc 12 30 V DRA ,POWER G ps 12.5 I 30 DQ = 100 mA D, G ps 28 V f = 2900 MHz η 12 Pulse Width = 300 11 26 V μsec 25 Duty Cycle = 10% VDD = 24 V 11.5 20 10 30 100 500 0 100 200 300 400 Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency Figure 7. Pulsed Power Gain versus versus Output Power Output Power
16 17 55 - 30_C 1000 mA 16 25_C 50 Gps 85_C ) 15 15 45 (% B) B) TC = - 30_C (d (d 14 NCY 500 mA 40 GAIN GAIN 25_C 14 13 35 EFFICIE IN 12 30 ,POWER 200 mA ,POWER 85_C DRA G ps V 13 DD = 30 Vdc G ps f = 2900 MHz 11 25 D,η Pulse Width = 300 V I μsec 10 DD = 30 Vdc, IDQ = 100 mA, f = 2900 MHz DQ = 100 mA 20 Duty Cycle = 10% ηD Pulse Width = 300 μsec, Duty Cycle = 10% 12 9 15 0 100 200 300 400 20 100 500 Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus Figure 9. Pulsed Power Gain and Drain Efficiency Output Power versus Output Power MRF8P29300HR6 MRF8P29300HSR6
RF Device Data Freescale Semiconductor 5
1000 Coss 60 Ideal C 59 P3dB = 55.16 dBm (328 W) iss 58 (pF 100 P2dB = 54.82 dBm (303 W) (dBm) 57 ANCE Measured with ±30 mV(rms)ac @ 1 MHz 56 P1dB = 54.19 dBm (263 W) Actual PACIT VGS = 0 Vdc POWER 55 CA 10 T C, 54 UTPU 53 ,O Crss P out 52 1 51 VDD = 30 Vdc, IDQ = 100 mA, f = 2900 MHz 0 4 8 12 16 20 24 28 32 Pulse Width = 300 μsec, Duty Cycle = 10% 50 VDS, DRAIN- SOURCE VOLTAGE (VOLTS) 35 36 37 38 39 40 41 42 43 44 45
Note:
Each side of device measured separately
.
Pin, INPUT POWER (dBm) PULSED
Figure 4. Capacitance versus Drain- Source Voltage Figure 5. Pulsed Output Power versus Input Power
15 55 16 IDQ=100mA,f=2900MHz 14.5 50 Pulse Width = 300 μsec G 15 ps ) Duty Cycle = 10% B) 14 45 (% B) (d NCY (d 14 GAIN 13.5 40 GAIN ηD 13 13 35 EFFICIE IN 32 V ,POWER VDD = 30 Vdc 12 30 V DRA ,POWER G ps 12.5 I 30 DQ = 100 mA D, G ps 28 V f = 2900 MHz η 12 Pulse Width = 300 11 26 V μsec 25 Duty Cycle = 10% VDD = 24 V 11.5 20 10 30 100 500 0 100 200 300 400 Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency Figure 7. Pulsed Power Gain versus versus Output Power Output Power
16 17 55 - 30_C 1000 mA 16 25_C 50 Gps 85_C ) 15 15 45 (% B) B) TC = - 30_C (d (d 14 NCY 500 mA 40 GAIN GAIN 25_C 14 13 35 EFFICIE IN 12 30 ,POWER 200 mA ,POWER 85_C DRA G ps V 13 DD = 30 Vdc G ps f = 2900 MHz 11 25 D,η Pulse Width = 300 V I μsec 10 DD = 30 Vdc, IDQ = 100 mA, f = 2900 MHz DQ = 100 mA 20 Duty Cycle = 10% ηD Pulse Width = 300 μsec, Duty Cycle = 10% 12 9 15 0 100 200 300 400 20 100 500 Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus Figure 9. Pulsed Power Gain and Drain Efficiency Output Power versus Output Power MRF8P29300HR6 MRF8P29300HSR6
RF Device Data Freescale Semiconductor 5