Datasheet MRF8P29300HR6, MRF8P29300HSR6 (NXP) - 6
| Fabricante | NXP |
| Descripción | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| Páginas / Página | 16 / 6 — TYPICAL CHARACTERISTICS. Figure 10. Pulsed Output Power versus. Input … |
| Formato / tamaño de archivo | PDF / 1.1 Mb |
| Idioma del documento | Inglés |
TYPICAL CHARACTERISTICS. Figure 10. Pulsed Output Power versus. Input Power. Figure 11. Pulsed Power Gain, Drain Efficiency
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MRF8P29300H
MRF8P29300HS
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TYPICAL CHARACTERISTICS
400 TC = - 30_C 25_C PULSED 300 85_C ATTS) (W 200 POWER T 100 UTPU ,O VDD = 30 Vdc, IDQ = 100 mA, f = 2900 MHz P out Pulse Width = 300 μsec, Duty Cycle = 10% 0 0 4 8 12 16 20 24 Pin, INPUT POWER (WATTS) PULSED
Figure 10. Pulsed Output Power versus Input Power
15 53 - 8 Gps 14.5 52 ) - 10 IRL (% (dB) B) (d 14 51 NCY SS - 12 LO ηD GAIN RN 13.5 50 EFFICIE - 14 IN RETU T ,POWER 13 V 49 DRA DD = 30 Vdc - 16 , PU G ps D IDQ = 100 mA η Pulse Width = 300 L,IN μsec 12.5 48 IR Duty Cycle = 10% - 18 12 47 - 20 2700 2750 2800 2850 2900 f, FREQUENCY (MHz)
Figure 11. Pulsed Power Gain, Drain Efficiency and Input Return Loss versus Frequency MRF8P29300HR6 MRF8P29300HSR6
RF Device Data 6 Freescale Semiconductor
400 TC = - 30_C 25_C PULSED 300 85_C ATTS) (W 200 POWER T 100 UTPU ,O VDD = 30 Vdc, IDQ = 100 mA, f = 2900 MHz P out Pulse Width = 300 μsec, Duty Cycle = 10% 0 0 4 8 12 16 20 24 Pin, INPUT POWER (WATTS) PULSED
Figure 10. Pulsed Output Power versus Input Power
15 53 - 8 Gps 14.5 52 ) - 10 IRL (% (dB) B) (d 14 51 NCY SS - 12 LO ηD GAIN RN 13.5 50 EFFICIE - 14 IN RETU T ,POWER 13 V 49 DRA DD = 30 Vdc - 16 , PU G ps D IDQ = 100 mA η Pulse Width = 300 L,IN μsec 12.5 48 IR Duty Cycle = 10% - 18 12 47 - 20 2700 2750 2800 2850 2900 f, FREQUENCY (MHz)
Figure 11. Pulsed Power Gain, Drain Efficiency and Input Return Loss versus Frequency MRF8P29300HR6 MRF8P29300HSR6
RF Device Data 6 Freescale Semiconductor