Datasheet MRF8P29300HR6, MRF8P29300HSR6 (NXP) - 8
| Fabricante | NXP |
| Descripción | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| Páginas / Página | 16 / 8 — Zsource. Zload. MHz. Z source. Z load. Figure 13. Series Equivalent … |
| Formato / tamaño de archivo | PDF / 1.1 Mb |
| Idioma del documento | Inglés |
Zsource. Zload. MHz. Z source. Z load. Figure 13. Series Equivalent Source and Load Impedance. MRF8P29300HR6 MRF8P29300HSR6
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MRF8P29300H
MRF8P29300HS
Versión de texto del documento
Zo = 10 Ω f = 2900 MHz f = 2900 MHz f = 2700 MHz Zload Zsource f = 2700 MHz VDD = 30 Vdc, IDQ = 100 mA, Pout = 320 W Peak
f Zsource Zload MHz
Ω Ω 2700 4.7 - j2.0 7.8 - j1.0 2800 4.7 - j1.7 8.7 - j0.2 2900 4.7 - j1.5 9.4 - j0.7 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Device Output Matching + Under - Matching Network Test Network - +
Z source Z load Figure 13. Series Equivalent Source and Load Impedance MRF8P29300HR6 MRF8P29300HSR6
RF Device Data 8 Freescale Semiconductor
f Zsource Zload MHz
Ω Ω 2700 4.7 - j2.0 7.8 - j1.0 2800 4.7 - j1.7 8.7 - j0.2 2900 4.7 - j1.5 9.4 - j0.7 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Device Output Matching + Under - Matching Network Test Network - +
Z source Z load Figure 13. Series Equivalent Source and Load Impedance MRF8P29300HR6 MRF8P29300HSR6
RF Device Data 8 Freescale Semiconductor