Datasheet BCX42 (Infineon) - 3
| Fabricante | Infineon |
| Descripción | NPN Silicon AF and Switching Transistor |
| Páginas / Página | 7 / 3 — BCX42. DC current gain. Collector-emitter saturation voltage. … |
| Formato / tamaño de archivo | PDF / 539 Kb |
| Idioma del documento | Inglés |
BCX42. DC current gain. Collector-emitter saturation voltage. Base-emitter saturation voltage. Collector current
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BCX42 DC current gain
hFE = ƒ(IC)
Collector-emitter saturation voltage
VCE = 1 V IC = ƒ(VCEsat), hFE = 10 BCX 42/BSS 63 EHP00435 3 BCX 42/BSS 63 EHP00433 10 10 3 10 mA h 5 150 Ι ˚C FE C 25 ˚C 10 2 10 -50 ˚C 150 ˚C 5 25 ˚C -50 ˚C 102 10 1 10 5 5 0 10 5 1 10 10 -1 10-1 5 10 0 1 5 10 5 10 2 mA 10 3 0 200 400 600 mV 800 Ι V C CE sat
Base-emitter saturation voltage Collector current
IC = ƒ(VBE) IC = ƒ(VBEsat), hFE = 10 VCE = 1V BCX 42/BSS 63 EHP00432 10 3 BCX 42/BSS 63 EHP00429 10 3 mA mA Ι C Ι C 10 2 10 2 5 5 150 ˚C T = 150 ˚C A 25 ˚C 25 ˚C -50 ˚C -50 ˚C 10 1 10 1 5 5 0 0 10 10 5 5 10 -1 10 -1 0 1 2 V 3 0 1 2 V 3 V V BE sat BE 3 2011-10-04
hFE = ƒ(IC)
Collector-emitter saturation voltage
VCE = 1 V IC = ƒ(VCEsat), hFE = 10 BCX 42/BSS 63 EHP00435 3 BCX 42/BSS 63 EHP00433 10 10 3 10 mA h 5 150 Ι ˚C FE C 25 ˚C 10 2 10 -50 ˚C 150 ˚C 5 25 ˚C -50 ˚C 102 10 1 10 5 5 0 10 5 1 10 10 -1 10-1 5 10 0 1 5 10 5 10 2 mA 10 3 0 200 400 600 mV 800 Ι V C CE sat
Base-emitter saturation voltage Collector current
IC = ƒ(VBE) IC = ƒ(VBEsat), hFE = 10 VCE = 1V BCX 42/BSS 63 EHP00432 10 3 BCX 42/BSS 63 EHP00429 10 3 mA mA Ι C Ι C 10 2 10 2 5 5 150 ˚C T = 150 ˚C A 25 ˚C 25 ˚C -50 ˚C -50 ˚C 10 1 10 1 5 5 0 0 10 10 5 5 10 -1 10 -1 0 1 2 V 3 0 1 2 V 3 V V BE sat BE 3 2011-10-04