Datasheet BCX42 (Infineon) - 4
| Fabricante | Infineon |
| Descripción | NPN Silicon AF and Switching Transistor |
| Páginas / Página | 7 / 4 — BCX42. Collector cutoff current. Transition frequency. Collector-base … |
| Formato / tamaño de archivo | PDF / 539 Kb |
| Idioma del documento | Inglés |
BCX42. Collector cutoff current. Transition frequency. Collector-base capacitance. Total power dissipation
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BCX42 Collector cutoff current
ICBO = ƒ(TA)
Transition frequency
fT = ƒ(IC) VCBO = 100 V VCE = parameter in V, f = 2 GHz BCX 42/BSS 63 EHP00434 10 4 BCX 42/BSS 63 EHP00431 3 10 nA MHz Ι max 5 CB0 f 10 3 T 5 10 2 5 10 2 typ 10 1 5 5 0 10 5 10 -1 1 10 0 50 100 ˚C 150 10 0 10 1 5 10 2 mA 10 3 5 T Ι A C
Collector-base capacitance
Ccb = ƒ(VCB)
Total power dissipation
Ptot = ƒ(TS)
Emitter-base capacitance
Ceb = ƒ(VEB) 90 400 pF mW ) 70 EB 300 (C 60 CB tot C 250 P 50 200 40 CEB 150 30 100 20 10 50 CCB 0 0 0 4 8 12 16 V 22 0 15 30 45 60 75 90 105 120 °C 150 VCB(VEB TS 4 2011-10-04
ICBO = ƒ(TA)
Transition frequency
fT = ƒ(IC) VCBO = 100 V VCE = parameter in V, f = 2 GHz BCX 42/BSS 63 EHP00434 10 4 BCX 42/BSS 63 EHP00431 3 10 nA MHz Ι max 5 CB0 f 10 3 T 5 10 2 5 10 2 typ 10 1 5 5 0 10 5 10 -1 1 10 0 50 100 ˚C 150 10 0 10 1 5 10 2 mA 10 3 5 T Ι A C
Collector-base capacitance
Ccb = ƒ(VCB)
Total power dissipation
Ptot = ƒ(TS)
Emitter-base capacitance
Ceb = ƒ(VEB) 90 400 pF mW ) 70 EB 300 (C 60 CB tot C 250 P 50 200 40 CEB 150 30 100 20 10 50 CCB 0 0 0 4 8 12 16 V 22 0 15 30 45 60 75 90 105 120 °C 150 VCB(VEB TS 4 2011-10-04