Datasheet BCX42 (Infineon) - 2

FabricanteInfineon
DescripciónNPN Silicon AF and Switching Transistor
Páginas / Página7 / 2 — BCX42. Electrical Characteristics. Parameter. Symbol. Values. Unit. min. …
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Idioma del documentoInglés

BCX42. Electrical Characteristics. Parameter. Symbol. Values. Unit. min. typ. max. DC Characteristics. AC Characteristics

BCX42 Electrical Characteristics Parameter Symbol Values Unit min typ max DC Characteristics AC Characteristics

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BCX42 Electrical Characteristics
at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit min. typ. max. DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO 125 - - V IC = 10 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 125 - - IC = 100 µA, IE = 0 Emitter-base breakdown voltage V(BR)EBO 5 - - IE = 10 µA, IC = 0 Collector-base cutoff current ICBO µA VCB = 100 V, IE = 0 - - 0.1 VCB = 100 V, IE = 0 , TA = 150 °C - - 20 Collector-emitter cutoff current ICEO VCE = 100 V, TA = 85 °C - - 10 VCE = 100 V, TA = 125 °C - - 75 Emitter-base cutoff current IEBO - - 100 nA VEB = 4 V, IC = 0 DC current gain1) hFE - IC = 100 µA, VCE = 1 V 25 - - IC = 100 mA, VCE = 1 V 63 - - IC = 200 mA, VCE = 1 V 40 - - Collector-emitter saturation voltage1) VCEsat - - 0.9 V IC = 300 mA, IB = 30 mA Base emitter saturation voltage1) VBEsat - - 1.4 IC = 300 mA, IB = 30 mA
AC Characteristics
Transition frequency fT - 150 - MHz IC = 20 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance Ccb - 12 - pF VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 2 2011-10-04