Datasheet MTP3N60E (ON Semiconductor) - 4

MTP3N60E ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS 600 — — Vdc (VGS = 0, ID = 250 μAdc) Zero Gate Voltage Drain Current IDSS μAdc (VDS = 600 V, VGS = 0) — — 10 (VDS = 480 V, VGS = 0, TJ = 125°C) — — 100 Gate−Body Leakage Current — Forward (VGSF = 20 Vdc, VDS = 0) IGSSF — — 100 nAdc Gate−Body Leakage Current — Reverse (VGSR = 20 Vdc, VDS = 0) IGSSR — — 100 nAdc
ON CHARACTERISTICS*
Gate Threshold Voltage VGS(th) Vdc (VDS = VGS, ID = 250 μAdc) 2.0 — 4.0 (TJ = 125°C) 1.5 — 3.5 Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 1.5 A) RDS(on) — 2.1 2.2 Ohms Drain−to−Source On−Voltage (VGS = 10 Vdc) VDS(on) Vdc (ID = 3.0 A) — — 9.0 (ID = 1.5 A, TJ = 100°C) — — 7.5 Forward Transconductance (VDS = 15 Vdc, ID = 1.5 A) gFS 1.5 — — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss — 770 — pF (VDS = 25 V, VGS = 0, Output Capacitance C f = 1.0 MHz) oss — 105 — Transfer Capacitance Crss — 19 —
SWITCHING CHARACTERISTICS*
Turn−On Delay Time td(on) — 23 — ns (V Rise Time DD = 300 V, ID ≈ 3.0 A, tr — 34 — RL = 100 Ω, RG = 12 Ω, Turn−Off Delay Time V t GS(on) = 10 V) d(off) — 58 — Fall Time tf — 35 — Total Gate Charge Qg — 28 31 nC (VDS = 420 V, ID = 3.0 A, Gate−Source Charge Q V gs — 5.0 — GS = 10 V) Gate−Drain Charge Qgd — 17 —
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage VSD — — 1.4 Vdc Forward Turn−On Time (IS = 3.0 A, di/dt = 100 A/μs) ton — ** — ns Reverse Recovery Time trr — 400 —
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance Ld nH (Measured from the contact screw on tab to center of die) — 3.5 — (Measured from the drain lead 0.25″ from package to center of die) — 4.5 — Internal Source Inductance Ls — 7.5 — (Measured from the source lead 0.25″ from package to source bond pad) * Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤ 2.0%. ** Limited by circuit inductance.
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