Datasheet MTP3N60E (ON Semiconductor) - 9

FabricanteON Semiconductor
DescripciónTMOS E−FET High Energy Power FET N−Channel Enhancement−Mode Silicon Gate
Páginas / Página9 / 9 — MTP3N60E. PACKAGE DIMENSIONS. CASE 221A−09. ISSUE Z. −T−. ON …
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MTP3N60E. PACKAGE DIMENSIONS. CASE 221A−09. ISSUE Z. −T−. ON Semiconductor. PUBLICATION ORDERING INFORMATION. LITERATURE FULFILLMENT

MTP3N60E PACKAGE DIMENSIONS CASE 221A−09 ISSUE Z −T− ON Semiconductor PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT

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MTP3N60E

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MTP3N60E PACKAGE DIMENSIONS CASE 221A−09 ISSUE Z
NOTES: SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
−T−
PLANE Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
C
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S
BODY AND LEAD IRREGULARITIES ARE ALLOWED. 4 INCHES MILLIMETERS DIM MIN MAX MIN MAX
Q A
A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 1 2 3
U
C 0.160 0.190 4.07 4.82
H
D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73
K
G 0.095 0.105 2.42 2.66
Z
H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52
L R
N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04
V J
R 0.080 0.110 2.04 2.79
G
S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47
D
U 0.000 0.050 0.00 1.27
N
V 0.045 −−− 1.15 −−− Z −−− 0.080 −−− 2.04 STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN E−FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
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