Datasheet MTP3N60E (ON Semiconductor) - 3
| Fabricante | ON Semiconductor |
| Descripción | TMOS E−FET High Energy Power FET N−Channel Enhancement−Mode Silicon Gate |
| Páginas / Página | 9 / 3 — MTP3N60E. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. UNCLAMPED … |
| Formato / tamaño de archivo | PDF / 292 Kb |
| Idioma del documento | Inglés |
MTP3N60E. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS. THERMAL CHARACTERISTICS
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MTP3N60E
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MTP3N60E MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−Source Voltage VDSS 600 Vdc Drain−Gate Voltage (RGS = 1.0 MΩ) VDGR 600 Vdc Gate−Source Voltage — Continuous VGS ± 20 Vdc Gate−Source Voltage — Non−repetitive VGSM ± 40 Vpk Drain Current — Continuous ID 3.0 Adc Drain Current — Continuous @ 100°C ID 2.4 Drain Current — Pulsed IDM 14 Total Power Dissipation @ TC = 25°C PD 75 Watts Derate above 25°C 0.6 W/°C Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C
UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS
(TJ < 150°C) Single Pulse Drain−to−Source Avalanche Energy — TJ = 25°C WDSR(1) 290 mJ Single Pulse Drain−to−Source Avalanche Energy — TJ = 100°C 46 Repetitive Pulse Drain−to−Source Avalanche Energy WDSR(2) 7.5
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case° RθJC 1.67 °C/W Thermal Resistance — Junction to Ambient° RθJA 62.5 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C (1) VDD = 50 V, ID = 3.0 A (2) Pulse Width and frequency is limited by TJ(max) and thermal response
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
http://onsemi.com 2
(TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−Source Voltage VDSS 600 Vdc Drain−Gate Voltage (RGS = 1.0 MΩ) VDGR 600 Vdc Gate−Source Voltage — Continuous VGS ± 20 Vdc Gate−Source Voltage — Non−repetitive VGSM ± 40 Vpk Drain Current — Continuous ID 3.0 Adc Drain Current — Continuous @ 100°C ID 2.4 Drain Current — Pulsed IDM 14 Total Power Dissipation @ TC = 25°C PD 75 Watts Derate above 25°C 0.6 W/°C Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C
UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS
(TJ < 150°C) Single Pulse Drain−to−Source Avalanche Energy — TJ = 25°C WDSR(1) 290 mJ Single Pulse Drain−to−Source Avalanche Energy — TJ = 100°C 46 Repetitive Pulse Drain−to−Source Avalanche Energy WDSR(2) 7.5
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case° RθJC 1.67 °C/W Thermal Resistance — Junction to Ambient° RθJA 62.5 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C (1) VDD = 50 V, ID = 3.0 A (2) Pulse Width and frequency is limited by TJ(max) and thermal response
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
http://onsemi.com 2