Datasheet MTP3N60E (ON Semiconductor) - 5
| Fabricante | ON Semiconductor |
| Descripción | TMOS E−FET High Energy Power FET N−Channel Enhancement−Mode Silicon Gate |
| Páginas / Página | 9 / 5 — MTP3N60E. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On−Region … |
| Formato / tamaño de archivo | PDF / 292 Kb |
| Idioma del documento | Inglés |
MTP3N60E. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On−Region Characteristics. Figure 2. Gate−Threshold Voltage Variation
Línea de modelo para esta hoja de datos
MTP3N60E
Versión de texto del documento
MTP3N60E TYPICAL ELECTRICAL CHARACTERISTICS
D 8 1.2 VGS = 10 V 7 V VDS = VGS 1.1 ID = 0.25 mA 6 (AMPS) TAGE (NORMALIZE 1 4 0.9 6 V , DRAIN CURRENT 2 THRESHOLD VOL I D 0.8 TE 5 V , GA 0 0.7 0 2 4 6 8 10 12 14 16 18 20 GS(th) −50 −25 0 25 50 75 100 125 1 V VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)
Figure 1. On−Region Characteristics Figure 2. Gate−Threshold Voltage Variation With Temperature
TAGE 10 1.2 V 8 1.1 GS = 0 VDS ≥ 10 V ID = 250 μA (AMPS) 6 1 4 0.9 100 O−SOURCE BREAKDOWN VOL (NORMALIZED) °C , DRAIN CURRENT I D 2 0.8 TJ = 25°C −55°C , DRAIN−T 0 0 1 2 3 4 5 6 7 8 9 BR(DSS) −50 −25 0 25 50 75 100 125 1 V VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Transfer Characteristics Figure 4. Breakdown Voltage Variation With Temperature
6 3 ANCE VGS = 10 V 100°C ANCE (OHMS) VGS = 10 V ID = 2 A 4 2 TJ = 25°C O−SOURCE ON−RESIST O−SOURCE RESIST 2 (NORMALIZED) 1 −55°C , DRAIN−T , DRAIN−T DS(on) DS(on) 0 R 0 R 0 2 4 6 8 10 −50 −25 0 25 50 75 100 125 1 ID, DRAIN CURRENT (AMPS) TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance versus Drain Current Figure 6. On−Resistance Variation With Temperature http://onsemi.com 4
D 8 1.2 VGS = 10 V 7 V VDS = VGS 1.1 ID = 0.25 mA 6 (AMPS) TAGE (NORMALIZE 1 4 0.9 6 V , DRAIN CURRENT 2 THRESHOLD VOL I D 0.8 TE 5 V , GA 0 0.7 0 2 4 6 8 10 12 14 16 18 20 GS(th) −50 −25 0 25 50 75 100 125 1 V VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)
Figure 1. On−Region Characteristics Figure 2. Gate−Threshold Voltage Variation With Temperature
TAGE 10 1.2 V 8 1.1 GS = 0 VDS ≥ 10 V ID = 250 μA (AMPS) 6 1 4 0.9 100 O−SOURCE BREAKDOWN VOL (NORMALIZED) °C , DRAIN CURRENT I D 2 0.8 TJ = 25°C −55°C , DRAIN−T 0 0 1 2 3 4 5 6 7 8 9 BR(DSS) −50 −25 0 25 50 75 100 125 1 V VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Transfer Characteristics Figure 4. Breakdown Voltage Variation With Temperature
6 3 ANCE VGS = 10 V 100°C ANCE (OHMS) VGS = 10 V ID = 2 A 4 2 TJ = 25°C O−SOURCE ON−RESIST O−SOURCE RESIST 2 (NORMALIZED) 1 −55°C , DRAIN−T , DRAIN−T DS(on) DS(on) 0 R 0 R 0 2 4 6 8 10 −50 −25 0 25 50 75 100 125 1 ID, DRAIN CURRENT (AMPS) TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance versus Drain Current Figure 6. On−Resistance Variation With Temperature http://onsemi.com 4