Datasheet T1610, T1635, T1650, BTA16, BTB16 (STMicroelectronics) - 3
| Fabricante | STMicroelectronics |
| Descripción | Snubberless, logic level and standard 16 A Triacs |
| Páginas / Página | 18 / 3 — T1610, T1635, T1650, BTA16, BTB16. Characteristics. BTA16. Symbol. … |
| Formato / tamaño de archivo | PDF / 232 Kb |
| Idioma del documento | Inglés |
T1610, T1635, T1650, BTA16, BTB16. Characteristics. BTA16. Symbol. Parameters. Quadrant. BTB16. Unit
Línea de modelo para esta hoja de datos
- BTA16-600B BTA16-600BRG BTA16-600BWRG BTA16-600CRG BTA16-600CWRG BTA16-600SWRG BTA16-800BRG BTA16-800BWRG BTA16-800CWRG BTA16-800SWRG
Versión de texto del documento
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T1610, T1635, T1650, BTA16, BTB16 Characteristics BTA16 Symbol Parameters Quadrant BTB16 Unit C B
dV/dt(2) VD = 67 % VDRM gate open, Tj = 125 °C Min. 200 400 V/µs (dV/dt)c(2) (dI/dt)c = 7 A/ms, Tj = 125 °C Min. 5 10 V/µs 1. Minimum IGT is guaranteed at 5 % of IGT max. 2. For both polarities of A2 referenced to A1
Table 4. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - Snubberless and logic level (3 quadrants) T1610 / BTA16- T1635 / T1650 / Symbol Parameters Quadrant SW / BTB16- BTA16-CW / BTA16-BW / Unit SW BTB16-CW BTB16-BW
I (1) GT Max. 10 35 50 mA VD = 12 V, RL = 30 Ω VGT I - II - III Max. 1.3 V VGD VD = VDRM, RL = 3,3 kΩ, Tj = 125 °C Min. 0.2 V I (2) H IT = 500 mA Max. 15 35 50 mA I - III Max. 25 50 70 IL IG = 1.2 IGT mA II Max. 30 60 80 (dV/dt)(2) VD = 67 % VDRM gate open, Tj = 125 °C Min. 40 500 1000 V/µs (dV/dt)c = 0.1 V/μs, Tj = 125 °C 8.5 (dI/dt)c(2) (dV/dt)c = 10 V/μs, Tj = 125 °C Min. 3.0 A/ms Without snubber, Tj = 125 °C 8.5 14 1. Minimum IGT is guaranteed at 5 % of IGT max. 2. For both polarities of A2 referenced to A1
Table 5. Thermal resistance Symbol Parameters Value Unit
TO-220AB / D²PAK 1.2 Rth(j-c) Max. junction to case (AC) TO-220AB insulated 2.1 °C/W Junction to ambient (S = 2 cm²) D²PAK 45 Rth(j-a) Junction to ambient TO-220AB / TO-220AB ins 60 1. Copper surface under tab.
DS2114
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Rev 11 page 3/18
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 TO-220AB Insulated and non Insulated package information 2.1.1 TO-220AB Insulated and non Insulated package information 2.2 D²PAK package information 2.2.1 D²PAK package information 3 Ordering information 3.1 Product selector 3.2 Ordering information Revision history
T1610, T1635, T1650, BTA16, BTB16 Characteristics BTA16 Symbol Parameters Quadrant BTB16 Unit C B
dV/dt(2) VD = 67 % VDRM gate open, Tj = 125 °C Min. 200 400 V/µs (dV/dt)c(2) (dI/dt)c = 7 A/ms, Tj = 125 °C Min. 5 10 V/µs 1. Minimum IGT is guaranteed at 5 % of IGT max. 2. For both polarities of A2 referenced to A1
Table 4. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - Snubberless and logic level (3 quadrants) T1610 / BTA16- T1635 / T1650 / Symbol Parameters Quadrant SW / BTB16- BTA16-CW / BTA16-BW / Unit SW BTB16-CW BTB16-BW
I (1) GT Max. 10 35 50 mA VD = 12 V, RL = 30 Ω VGT I - II - III Max. 1.3 V VGD VD = VDRM, RL = 3,3 kΩ, Tj = 125 °C Min. 0.2 V I (2) H IT = 500 mA Max. 15 35 50 mA I - III Max. 25 50 70 IL IG = 1.2 IGT mA II Max. 30 60 80 (dV/dt)(2) VD = 67 % VDRM gate open, Tj = 125 °C Min. 40 500 1000 V/µs (dV/dt)c = 0.1 V/μs, Tj = 125 °C 8.5 (dI/dt)c(2) (dV/dt)c = 10 V/μs, Tj = 125 °C Min. 3.0 A/ms Without snubber, Tj = 125 °C 8.5 14 1. Minimum IGT is guaranteed at 5 % of IGT max. 2. For both polarities of A2 referenced to A1
Table 5. Thermal resistance Symbol Parameters Value Unit
TO-220AB / D²PAK 1.2 Rth(j-c) Max. junction to case (AC) TO-220AB insulated 2.1 °C/W Junction to ambient (S = 2 cm²) D²PAK 45 Rth(j-a) Junction to ambient TO-220AB / TO-220AB ins 60 1. Copper surface under tab.
DS2114
-
Rev 11 page 3/18
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 TO-220AB Insulated and non Insulated package information 2.1.1 TO-220AB Insulated and non Insulated package information 2.2 D²PAK package information 2.2.1 D²PAK package information 3 Ordering information 3.1 Product selector 3.2 Ordering information Revision history