Datasheet T1610, T1635, T1650, BTA16, BTB16 (STMicroelectronics) - 5
| Fabricante | STMicroelectronics |
| Descripción | Snubberless, logic level and standard 16 A Triacs |
| Páginas / Página | 18 / 5 — T1610, T1635, T1650, BTA16, BTB16. Characteristics (curves). Figure 7. … |
| Formato / tamaño de archivo | PDF / 232 Kb |
| Idioma del documento | Inglés |
T1610, T1635, T1650, BTA16, BTB16. Characteristics (curves). Figure 7. Surge peak on-state current versus number of
Línea de modelo para esta hoja de datos
- BTA16-600B BTA16-600BRG BTA16-600BWRG BTA16-600CRG BTA16-600CWRG BTA16-600SWRG BTA16-800BRG BTA16-800BWRG BTA16-800CWRG BTA16-800SWRG
Versión de texto del documento
T1610, T1635, T1650, BTA16, BTB16 Characteristics (curves) Figure 7. Surge peak on-state current versus number of Figure 6. On-state characteristics (maximum values) cycles
ITM(A) I 200 TSM(A) 180 Tj max. T 100 j = Tj max. Vto = 0.85 V 160 Rd = 25 mΩ 140 t=20ms 120 Non repetitive One cycle Tj initial=25°C 100 10 Tj = 25 °C 80 Repetitive T = C 85°C 60 40 20 VTM(V) Numb er of cycles 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 1 0 100 1000
Figure 8. Non-repetitive surge peak on-state current for a Figure 9. Relative variation of gate trigger current sinusoidal
IGT, IH, IL[Tj] / IGT, IH, IL[Tj = 25 °C] 2.5 I 2 2 TSM(A),I t (A s) holding current and latching current versus junction 3000 temperature (typic al values) Tj initial=25°C 2.0 dI/dt limitation: 50A/µs IGT 1.5 1000 ITSM IH & IL 1.0 0.5 T(j °C) 0.0 puls e wi th width t tp(ms) -40 -20 02 04 06 08 0 100 120 140 p < 10 ms 100 0. 01 0. 10 1. 00 10. 00
Figure 10. Relative variation of critical rate of decrease of Figure 11. Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) main current versus (junction temperature (typical values)
(dl/dt)c [(dV/dt)c] / specified (dl/dt)c (dl/dt)c [Tj] / (dl/dt)c [Tj specified] 2.0 6 SW/T1610 Snubberless and logic level types 1.8 C 5 1.6 B 4 1.4 1.2 T1635/T1650/CW/BW 3 1.0 2 0.8 0.6 1 (dV/dt)c (V/µs) Tj(°C) 0.4 0 0.1 1.0 10.0 100.0 0 25 50 75 100 125
DS2114
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Rev 11 page 5/18
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 TO-220AB Insulated and non Insulated package information 2.1.1 TO-220AB Insulated and non Insulated package information 2.2 D²PAK package information 2.2.1 D²PAK package information 3 Ordering information 3.1 Product selector 3.2 Ordering information Revision history
ITM(A) I 200 TSM(A) 180 Tj max. T 100 j = Tj max. Vto = 0.85 V 160 Rd = 25 mΩ 140 t=20ms 120 Non repetitive One cycle Tj initial=25°C 100 10 Tj = 25 °C 80 Repetitive T = C 85°C 60 40 20 VTM(V) Numb er of cycles 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 1 0 100 1000
Figure 8. Non-repetitive surge peak on-state current for a Figure 9. Relative variation of gate trigger current sinusoidal
IGT, IH, IL[Tj] / IGT, IH, IL[Tj = 25 °C] 2.5 I 2 2 TSM(A),I t (A s) holding current and latching current versus junction 3000 temperature (typic al values) Tj initial=25°C 2.0 dI/dt limitation: 50A/µs IGT 1.5 1000 ITSM IH & IL 1.0 0.5 T(j °C) 0.0 puls e wi th width t tp(ms) -40 -20 02 04 06 08 0 100 120 140 p < 10 ms 100 0. 01 0. 10 1. 00 10. 00
Figure 10. Relative variation of critical rate of decrease of Figure 11. Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) main current versus (junction temperature (typical values)
(dl/dt)c [(dV/dt)c] / specified (dl/dt)c (dl/dt)c [Tj] / (dl/dt)c [Tj specified] 2.0 6 SW/T1610 Snubberless and logic level types 1.8 C 5 1.6 B 4 1.4 1.2 T1635/T1650/CW/BW 3 1.0 2 0.8 0.6 1 (dV/dt)c (V/µs) Tj(°C) 0.4 0 0.1 1.0 10.0 100.0 0 25 50 75 100 125
DS2114
-
Rev 11 page 5/18
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 TO-220AB Insulated and non Insulated package information 2.1.1 TO-220AB Insulated and non Insulated package information 2.2 D²PAK package information 2.2.1 D²PAK package information 3 Ordering information 3.1 Product selector 3.2 Ordering information Revision history