Datasheet IRLB8721PbF (Infineon)
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 9 / 1 — Applications. DSS. RDS(on) max. Qg (typ.). 30V 8.7m. @VGS = 10V. 7.6nC. … |
| Formato / tamaño de archivo | PDF / 274 Kb |
| Idioma del documento | Inglés |
Applications. DSS. RDS(on) max. Qg (typ.). 30V 8.7m. @VGS = 10V. 7.6nC. Benefits. Absolute Maximum Ratings. Parameter. Max. Units
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PD - 97390 IRLB8721PbF
Applications
HEXFET® Power MOSFET l Optimized for UPS/Inverter Applications
V
l High Frequency Synchronous Buck
DSS RDS(on) max Qg (typ.)
Converters for Computer Processor Power
30V 8.7m
:
@VGS = 10V 7.6nC
l High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial Use
Benefits
S D l Very Low RDS(on) at 4.5V VGS G l Ultra-Low Gate Impedance TO-220AB l Fully Characterized Avalanche Voltage IRLB8721PbF and Current l Lead-Free
G D S
Gate Drain Source
Absolute Maximum Ratings Parameter Max. Units
VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 ID @ T 62 C = 25°C Continuous Drain Current, VGS @ 10V ID @ T 44 A C = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c 250 PD @T 65 C = 25°C Maximum Power Dissipation g W PD @T 33 C = 100°C Maximum Power Dissipation g Linear Derating Factor 0.43 W/°C TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lbxin (1.1Nxm)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case g ––– 2.3 Rθ °C/W CS Case-to-Sink, Flat Greased Surface 0.5 ––– RθJA Junction-to-Ambient f ––– 62 Notes through are on page 9 www.irf.com 1 4/22/09
Applications
HEXFET® Power MOSFET l Optimized for UPS/Inverter Applications
V
l High Frequency Synchronous Buck
DSS RDS(on) max Qg (typ.)
Converters for Computer Processor Power
30V 8.7m
:
@VGS = 10V 7.6nC
l High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial Use
Benefits
S D l Very Low RDS(on) at 4.5V VGS G l Ultra-Low Gate Impedance TO-220AB l Fully Characterized Avalanche Voltage IRLB8721PbF and Current l Lead-Free
G D S
Gate Drain Source
Absolute Maximum Ratings Parameter Max. Units
VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 ID @ T 62 C = 25°C Continuous Drain Current, VGS @ 10V ID @ T 44 A C = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c 250 PD @T 65 C = 25°C Maximum Power Dissipation g W PD @T 33 C = 100°C Maximum Power Dissipation g Linear Derating Factor 0.43 W/°C TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lbxin (1.1Nxm)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case g ––– 2.3 Rθ °C/W CS Case-to-Sink, Flat Greased Surface 0.5 ––– RθJA Junction-to-Ambient f ––– 62 Notes through are on page 9 www.irf.com 1 4/22/09