Datasheet IRLB8721PbF (Infineon) - 2
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 9 / 2 — Static @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. … |
| Formato / tamaño de archivo | PDF / 274 Kb |
| Idioma del documento | Inglés |
Static @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions. Avalanche Characteristics. Typ. Max
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IRLB8721PbF
Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250μA ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 21 ––– mV/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 6.5 8.7 mΩ VGS = 10V, ID = 31A e ––– 13.1 16 VGS = 4.5V, ID = 25A e VGS(th) Gate Threshold Voltage 1.35 1.80 2.35 V VDS = VGS, ID = 25μA ΔVGS(th)/ΔTJ Gate Threshold Voltage Coefficient ––– -7.0 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA VDS = 24V, VGS = 0V ––– ––– 150 VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance 35 ––– ––– S VDS = 15V, ID = 25A Qg Total Gate Charge ––– 7.6 13 Qgs1 Pre-Vth Gate-to-Source Charge ––– 1.9 ––– VDS = 15V Qgs2 Post-Vth Gate-to-Source Charge ––– 1.2 ––– nC VGS = 4.5V Qgd Gate-to-Drain Charge ––– 3.4 ––– ID = 25A Qgodr Gate Charge Overdrive ––– 2.0 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 4.6 ––– Qoss Output Charge ––– 7.9 ––– nC VDS = 15V, VGS = 0V RG Gate Resistance ––– 2.3 3.8 Ω td(on) Turn-On Delay Time ––– 9.1 ––– VDD = 15V, VGS = 4.5Ve tr Rise Time ––– 93 ––– ID = 25A t R d(off) Turn-Off Delay Time ––– 9.0 ––– ns G = 1.8Ω tf Fall Time ––– 17 ––– See Fig. 14 Ciss Input Capacitance ––– 1077 ––– VGS = 0V Coss Output Capacitance ––– 360 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 110 ––– ƒ = 1.0MHz
Avalanche Characteristics Parameter Typ. Max. Units
E Single Pulse Avalanche Energy AS d ––– 98 mJ I Avalanche Currentc AR ––– 25 A
Diode Characteristics Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 62 MOSFET symbol (Body Diode) A showing the ISM Pulsed Source Current ––– ––– 250 integral reverse (Body Diode)c p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 25A, VGS = 0V e trr Reverse Recovery Time ––– 16 24 ns TJ = 25°C, IF = 25A, VDD = 15V Qrr Reverse Recovery Charge ––– 14 21 nC di/dt = 200A/μs e 2 www.irf.com
Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250μA ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 21 ––– mV/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 6.5 8.7 mΩ VGS = 10V, ID = 31A e ––– 13.1 16 VGS = 4.5V, ID = 25A e VGS(th) Gate Threshold Voltage 1.35 1.80 2.35 V VDS = VGS, ID = 25μA ΔVGS(th)/ΔTJ Gate Threshold Voltage Coefficient ––– -7.0 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA VDS = 24V, VGS = 0V ––– ––– 150 VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance 35 ––– ––– S VDS = 15V, ID = 25A Qg Total Gate Charge ––– 7.6 13 Qgs1 Pre-Vth Gate-to-Source Charge ––– 1.9 ––– VDS = 15V Qgs2 Post-Vth Gate-to-Source Charge ––– 1.2 ––– nC VGS = 4.5V Qgd Gate-to-Drain Charge ––– 3.4 ––– ID = 25A Qgodr Gate Charge Overdrive ––– 2.0 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 4.6 ––– Qoss Output Charge ––– 7.9 ––– nC VDS = 15V, VGS = 0V RG Gate Resistance ––– 2.3 3.8 Ω td(on) Turn-On Delay Time ––– 9.1 ––– VDD = 15V, VGS = 4.5Ve tr Rise Time ––– 93 ––– ID = 25A t R d(off) Turn-Off Delay Time ––– 9.0 ––– ns G = 1.8Ω tf Fall Time ––– 17 ––– See Fig. 14 Ciss Input Capacitance ––– 1077 ––– VGS = 0V Coss Output Capacitance ––– 360 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 110 ––– ƒ = 1.0MHz
Avalanche Characteristics Parameter Typ. Max. Units
E Single Pulse Avalanche Energy AS d ––– 98 mJ I Avalanche Currentc AR ––– 25 A
Diode Characteristics Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 62 MOSFET symbol (Body Diode) A showing the ISM Pulsed Source Current ––– ––– 250 integral reverse (Body Diode)c p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 25A, VGS = 0V e trr Reverse Recovery Time ––– 16 24 ns TJ = 25°C, IF = 25A, VDD = 15V Qrr Reverse Recovery Charge ––– 14 21 nC di/dt = 200A/μs e 2 www.irf.com