Datasheet IRLB8721PbF (Infineon) - 4
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 9 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| Formato / tamaño de archivo | PDF / 274 Kb |
| Idioma del documento | Inglés |
Fig 5. Fig 6. Fig 7. Fig 8
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IRLB8721PbF 10000 14 VGS = 0V, f = 1 MHZ ID= 25A Ciss = Cgs + Cgd, Cds SHORTED ) V C V 12 ( DS= 24V rss = Cgd e C g VDS= 15V ) oss = Cds + Cgd at F l 10 p o 1000 ( Ciss V e e c c n Coss r 8 a u ti o c S a - p o 6 t a - C Crss e t , 100 a C G 4 , SGV 2 0 10 0 4 8 12 16 20 24 28 1 10 100 Q V G Total Gate Charge (nC) DS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A( A ( t t n 100 n 100 100μsec er e r T rr u J = 175°C u C 1msec C ni e a c r r 10msec 10 D u o 10 e S s - r T o e J = 25°C t- v n e i R a r , 1 D D 1 , T I S I D C= 25°C TJ= 175°C VGS = 0V Single Pulse 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 100 VSD, Source-to-Drain Voltage (V) VDS, Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A( A ( t t n 100 n 100 100μsec er e r T rr u J = 175°C u C 1msec C ni e a c r r 10msec 10 D u o 10 e S s - r T o e J = 25°C t- v n e i R a r , 1 D D 1 , T I S I D C= 25°C TJ= 175°C VGS = 0V Single Pulse 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 100 VSD, Source-to-Drain Voltage (V) VDS, Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com