Datasheet IRLB8721PbF (Infineon) - 5
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 9 / 5 — Fig 9. Fig 10. Fig 11 |
| Formato / tamaño de archivo | PDF / 274 Kb |
| Idioma del documento | Inglés |
Fig 9. Fig 10. Fig 11
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IRLB8721PbF 80 2.5 ) ID = 1.0mA V( I e D = 250μA g ) 60 a 2.0 ID = 25μA A tl ( t o n V er dl r o u h C s 40 n e 1.5 i r a h r t D e t , a G I D ) 20 ht 1.0 ( SGV 0 0.5 25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175 TC , CaseTemperature (°C) TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Fig 10.
Threshold Voltage vs. Temperature Case Temperature 10 ) C 1 D = 0.50 JhtZ ( 0.20 es 0.10 n R1 R2 R3 R4 Ri (°C/W) τι (sec) o R R R 0.1 1 2 3 R4 p 0.05 s τJ τ 0.003454 13.68748 C e 0.02 τJ τ R τ1 0.17246 7.21E-05 l τ τ2 τ3 τ4 a 0.01 1 τ2 τ3 τ4 0.786312 0.001227 mre Ci= τi/Ri 1.368218 0.007178 0.01 h Ci i/Ri T SINGLE PULSE Notes: ( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
Fig 9.
Maximum Drain Current vs.
Fig 10.
Threshold Voltage vs. Temperature Case Temperature 10 ) C 1 D = 0.50 JhtZ ( 0.20 es 0.10 n R1 R2 R3 R4 Ri (°C/W) τι (sec) o R R R 0.1 1 2 3 R4 p 0.05 s τJ τ 0.003454 13.68748 C e 0.02 τJ τ R τ1 0.17246 7.21E-05 l τ τ2 τ3 τ4 a 0.01 1 τ2 τ3 τ4 0.786312 0.001227 mre Ci= τi/Ri 1.368218 0.007178 0.01 h Ci i/Ri T SINGLE PULSE Notes: ( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5