Datasheet SCT3160KLHR (Rohm) - 10
| Fabricante | Rohm |
| Descripción | Automotive Grade N-channel SiC power MOSFET |
| Páginas / Página | 13 / 10 — SCT3160KLHR. Electrical characteristic curves. TSQ50211-SCT3160KLHR. … |
| Formato / tamaño de archivo | PDF / 963 Kb |
| Idioma del documento | Inglés |
SCT3160KLHR. Electrical characteristic curves. TSQ50211-SCT3160KLHR. 16.Nov.2018 - Rev.001
Línea de modelo para esta hoja de datos
Versión de texto del documento
SCT3160KLHR
Datasheet l
Electrical characteristic curves
Fig.19 Typical Capacitance Fig.20 C vs. Drain - Source Voltage oss Stored Energy 10000 16 Ta = 25ºC ] 14 [µJ F] 1000 12 C SS iss O C [p : E 10 ce : rgy 100 Coss ne 8 citan 6 tored E Capa 10 Crss S 4 Ta = 25ºC f = 1MHz C oss 2 VGS = 0V 1 0 0.1 1 10 100 1000 0 100 200 300 400 500 600 700 800 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Fig.21 Dynamic Input Characteristics *Gate Charge Waveform 20 ] Ta = 25ºC V [V DD = 600V I GS 15 D =5A V Pulsed e : tag ol 10 rce V ou - S 5 ate G 0 0 10 20 30 40 50 Total Gate Charge : Qg [nC] www.rohm.com
TSQ50211-SCT3160KLHR
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/12
16.Nov.2018 - Rev.001
Datasheet l
Electrical characteristic curves
Fig.19 Typical Capacitance Fig.20 C vs. Drain - Source Voltage oss Stored Energy 10000 16 Ta = 25ºC ] 14 [µJ F] 1000 12 C SS iss O C [p : E 10 ce : rgy 100 Coss ne 8 citan 6 tored E Capa 10 Crss S 4 Ta = 25ºC f = 1MHz C oss 2 VGS = 0V 1 0 0.1 1 10 100 1000 0 100 200 300 400 500 600 700 800 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Fig.21 Dynamic Input Characteristics *Gate Charge Waveform 20 ] Ta = 25ºC V [V DD = 600V I GS 15 D =5A V Pulsed e : tag ol 10 rce V ou - S 5 ate G 0 0 10 20 30 40 50 Total Gate Charge : Qg [nC] www.rohm.com
TSQ50211-SCT3160KLHR
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/12
16.Nov.2018 - Rev.001