Datasheet SCT3160KLHR (Rohm) - 2
| Fabricante | Rohm |
| Descripción | Automotive Grade N-channel SiC power MOSFET |
| Páginas / Página | 13 / 2 — SCT3160KLHR. Electrical characteristics. Thermal resistance. Typical … |
| Formato / tamaño de archivo | PDF / 963 Kb |
| Idioma del documento | Inglés |
SCT3160KLHR. Electrical characteristics. Thermal resistance. Typical Transient Thermal Characteristics. TSQ50211-SCT3160KLHR
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SCT3160KLHR
Datasheet l
Electrical characteristics
(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. VGS = 0V, ID = 1mA Drain - Source breakdown V T voltage (BR)DSS j = 25°C 1200 - - V Tj = -55°C 1200 - - VGS = 0V, VDS =1200V Zero Gate voltage IDSS Tj = 25°C - 1 10 Drain current μA Tj = 150°C - 2 - Gate - Source leakage current IGSS+ VGS = +22V , VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V , VDS = 0V - - -100 nA Gate threshold voltage VGS (th) VDS = 10V, ID = 2.5mA 2.7 - 5.6 V VGS = 18V, ID = 5A Static Drain - Source *5 Tj = 25°C - 160 208 mΩ on - state resistance RDS(on) Tj = 150°C - 272 - Gate input resistance RG f = 1MHz, open drain - 18 - Ω l
Thermal resistance
Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - 1.12 1.46 °C/W l
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit Rth1 1.11E-01 Cth1 8.73E-04 Rth2 7.09E-01 K/W Cth2 5.10E-03 Ws/K Rth3 3.01E-01 Cth3 2.94E-02 T Rth1 R j th,n Tc PD Cth1 Cth2 Cth,n Ta www.rohm.com
TSQ50211-SCT3160KLHR
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/12
16.Nov.2018 - Rev.001
Datasheet l
Electrical characteristics
(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. VGS = 0V, ID = 1mA Drain - Source breakdown V T voltage (BR)DSS j = 25°C 1200 - - V Tj = -55°C 1200 - - VGS = 0V, VDS =1200V Zero Gate voltage IDSS Tj = 25°C - 1 10 Drain current μA Tj = 150°C - 2 - Gate - Source leakage current IGSS+ VGS = +22V , VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V , VDS = 0V - - -100 nA Gate threshold voltage VGS (th) VDS = 10V, ID = 2.5mA 2.7 - 5.6 V VGS = 18V, ID = 5A Static Drain - Source *5 Tj = 25°C - 160 208 mΩ on - state resistance RDS(on) Tj = 150°C - 272 - Gate input resistance RG f = 1MHz, open drain - 18 - Ω l
Thermal resistance
Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - 1.12 1.46 °C/W l
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit Rth1 1.11E-01 Cth1 8.73E-04 Rth2 7.09E-01 K/W Cth2 5.10E-03 Ws/K Rth3 3.01E-01 Cth3 2.94E-02 T Rth1 R j th,n Tc PD Cth1 Cth2 Cth,n Ta www.rohm.com
TSQ50211-SCT3160KLHR
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/12
16.Nov.2018 - Rev.001