Datasheet SCT3160KLHR (Rohm) - 3
| Fabricante | Rohm |
| Descripción | Automotive Grade N-channel SiC power MOSFET |
| Páginas / Página | 13 / 3 — SCT3160KLHR. Electrical characteristics. TSQ50211-SCT3160KLHR. … |
| Formato / tamaño de archivo | PDF / 963 Kb |
| Idioma del documento | Inglés |
SCT3160KLHR. Electrical characteristics. TSQ50211-SCT3160KLHR. 16.Nov.2018 - Rev.001
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SCT3160KLHR
Datasheet l
Electrical characteristics
(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Transconductance g *5 V fs DS = 10V, ID = 5A - 2.5 - S Input capacitance Ciss VGS = 0V - 398 - Output capacitance Coss VDS = 800V - 41 - pF Reverse transfer capacitance Crss f = 1MHz - 18 - VGS = 0V Effective output capacitance, Co(er) - 45 - pF energy related VDS = 0V to 600V Total Gate charge Q *5 VDS = 600V g - 42 - ID = 5A Gate - Source charge Q *5 gs V - 10 - nC GS = 18V Gate - Drain charge Q *5 See Fig. 1-1. gd - 22 - *5 VDS = 400V Turn - on delay time td(on) - 14 - ID = 5A Rise time t *5 r V - 18 - GS = 0V/+18V ns *5 RG = 0Ω Turn - off delay time td(off) - 24 - RL = 80Ω Fal time t *5 f - 25 - See Fig. 1-1, 1-2. VDS = 600V Turn - on switching loss E *5 V on GS=0V/18V, ID = 5A - 62 - RG = 0Ω, L = 750μH E μJ on includes diode *5 reverse recovery Turn - off switching loss Eoff L - 12 - σ = 50nH, Cσ = 200pF See Fig. 2-1, 2-2. www.rohm.com
TSQ50211-SCT3160KLHR
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 3/12
16.Nov.2018 - Rev.001
Datasheet l
Electrical characteristics
(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Transconductance g *5 V fs DS = 10V, ID = 5A - 2.5 - S Input capacitance Ciss VGS = 0V - 398 - Output capacitance Coss VDS = 800V - 41 - pF Reverse transfer capacitance Crss f = 1MHz - 18 - VGS = 0V Effective output capacitance, Co(er) - 45 - pF energy related VDS = 0V to 600V Total Gate charge Q *5 VDS = 600V g - 42 - ID = 5A Gate - Source charge Q *5 gs V - 10 - nC GS = 18V Gate - Drain charge Q *5 See Fig. 1-1. gd - 22 - *5 VDS = 400V Turn - on delay time td(on) - 14 - ID = 5A Rise time t *5 r V - 18 - GS = 0V/+18V ns *5 RG = 0Ω Turn - off delay time td(off) - 24 - RL = 80Ω Fal time t *5 f - 25 - See Fig. 1-1, 1-2. VDS = 600V Turn - on switching loss E *5 V on GS=0V/18V, ID = 5A - 62 - RG = 0Ω, L = 750μH E μJ on includes diode *5 reverse recovery Turn - off switching loss Eoff L - 12 - σ = 50nH, Cσ = 200pF See Fig. 2-1, 2-2. www.rohm.com
TSQ50211-SCT3160KLHR
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 3/12
16.Nov.2018 - Rev.001