Datasheet SCT3160KLHR (Rohm)

SCT3160KLHR
Automotive Grade N-channel SiC power MOSFET
Datasheet l
Outline
VDSS 1200V TO-247N RDS(on) (Typ.) 160mΩ I *1 D 17A PD 103W (1) (2) (3) l
Inner circuit
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Features
(1) Gate 1) Qualified to AEC-Q101 (2) Drain 2) Low on-resistance (3) Source 3) Fast switching speed *Body Diode 4) Fast reverse recovery Please note Driver Source and Power Source are 5) Easy to parallel not exchangeable. Their exchange might lead to 6) Simple to drive malfunction. 7) Pb-free lead plating ; RoHS compliant l
Packaging specifications
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Application
・Automobile Reel size (mm) - ・Switch mode power supplies Tape width (mm) - Type Basic ordering unit (pcs) 30 Taping code C11 Marking SCT3160KL l
Absolute maximum ratings
(Ta = 25°C) Parameter Symbol Value Unit Drain - Source Voltage VDSS 1200 V T *1 17 A Continuous Drain current c = 25°C ID Tc = 100°C I *1 D 12 A Pulsed Drain current I *2 D,pulse 42 A Gate - Source voltage (DC) VGSS -4 to +22 V Gate - Source surge voltage (t *3 surge < 300nsec) VGSS_surge -4 to +26 V Recommended drive voltage V *4 GS_op 0 / +18 V Junction temperature Tj 175 °C Range of storage temperature Tstg -55 to +175 °C www.rohm.com
TSQ50211-SCT3160KLHR
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/12
16.Nov.2018 - Rev.001