Datasheet IRF530N (International Rectifier) - 3
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 9 / 3 — Fig 1. Fig 2. Fig 3. Fig 4 |
| Formato / tamaño de archivo | PDF / 222 Kb |
| Idioma del documento | Inglés |
Fig 1. Fig 2. Fig 3. Fig 4
Versión de texto del documento
IRF530N 100 100 VGS VGS TOP 15V 15V 10V 10V 8.0V 8.0V 7.0V TOP 7.0V 6.0V 6.0V 5.5V 5.5V 5.0V 5.0V BOTTOM 4.5V BOTTOM 4.5V 4.5V 10 4.5V 10 D I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) 20µs PULSE WIDTH 20µs PULSE WIDTH T = 25 J °C T = 175 J °C 1 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 100 3.5 ID = 15A 3.0 T = 25 C ° J 2.5 T = 175 C ° 2.0 J 1.5 (Normalized) 1.0 I , Drain-to-Source Current (A) D 0.5 V = 50V DS DS(on) 20µs PULSE WIDTH V = 10V R , Drain-to-Source On Resistance GS 10 0.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V , Gate-to-Source Voltage (V) T , Junction Temperature ( C) ° GS J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 100 3.5 ID = 15A 3.0 T = 25 C ° J 2.5 T = 175 C ° 2.0 J 1.5 (Normalized) 1.0 I , Drain-to-Source Current (A) D 0.5 V = 50V DS DS(on) 20µs PULSE WIDTH V = 10V R , Drain-to-Source On Resistance GS 10 0.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V , Gate-to-Source Voltage (V) T , Junction Temperature ( C) ° GS J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3