Datasheet IRF530N (International Rectifier) - 2
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 9 / 2 — Electrical Characteristics @ TJ = 25°C (unless otherwise specified). … |
| Formato / tamaño de archivo | PDF / 222 Kb |
| Idioma del documento | Inglés |
Electrical Characteristics @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions
Versión de texto del documento
IRF530N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 90 mΩ VGS = 10V, ID = 9.0A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 12 ––– ––– S VDS = 50V, ID = 9.0A ––– ––– 25 V IDSS Drain-to-Source Leakage Current µA DS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V IGSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 37 ID = 9.0A Qgs Gate-to-Source Charge ––– ––– 7.2 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 11 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 9.2 ––– VDD = 50V tr Rise Time ––– 22 ––– ID = 9.0A ns td(off) Turn-Off Delay Time ––– 35 ––– RG = 12Ω tf Fall Time ––– 25 ––– VGS = 10V, See Fig. 10 Between lead, D LD Internal Drain Inductance ––– 4.5 ––– 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 920 ––– VGS = 0V Coss Output Capacitance ––– 130 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 19 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 340 93 mJ IAS = 9.0A, L = 2.3mH
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
D IS Continuous Source Current MOSFET symbol ––– ––– 17 (Body Diode) showing the A G ISM Pulsed Source Current integral reverse 60 (Body Diode) S ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 9.0A, VGS = 0V trr Reverse Recovery Time ––– 93 140 ns TJ = 25°C, IF = 9.0A Qrr Reverse Recovery Charge ––– 320 480 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature. (See fig. 11) This is a typical value at device destruction and represents Starting T operation outside rated limits. J = 25°C, L = 2.3mH R This is a calculated value limited to TJ = 175°C . G = 25Ω, IAS = 9.0A, VGS=10V (See Figure 12) ISD ≤ 9.0A, di/dt ≤ 410A/µs, VDD ≤ V(BR)DSS, T ≤ J 175°C 2 www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 90 mΩ VGS = 10V, ID = 9.0A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 12 ––– ––– S VDS = 50V, ID = 9.0A ––– ––– 25 V IDSS Drain-to-Source Leakage Current µA DS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V IGSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 37 ID = 9.0A Qgs Gate-to-Source Charge ––– ––– 7.2 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 11 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 9.2 ––– VDD = 50V tr Rise Time ––– 22 ––– ID = 9.0A ns td(off) Turn-Off Delay Time ––– 35 ––– RG = 12Ω tf Fall Time ––– 25 ––– VGS = 10V, See Fig. 10 Between lead, D LD Internal Drain Inductance ––– 4.5 ––– 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 920 ––– VGS = 0V Coss Output Capacitance ––– 130 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 19 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 340 93 mJ IAS = 9.0A, L = 2.3mH
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
D IS Continuous Source Current MOSFET symbol ––– ––– 17 (Body Diode) showing the A G ISM Pulsed Source Current integral reverse 60 (Body Diode) S ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 9.0A, VGS = 0V trr Reverse Recovery Time ––– 93 140 ns TJ = 25°C, IF = 9.0A Qrr Reverse Recovery Charge ––– 320 480 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature. (See fig. 11) This is a typical value at device destruction and represents Starting T operation outside rated limits. J = 25°C, L = 2.3mH R This is a calculated value limited to TJ = 175°C . G = 25Ω, IAS = 9.0A, VGS=10V (See Figure 12) ISD ≤ 9.0A, di/dt ≤ 410A/µs, VDD ≤ V(BR)DSS, T ≤ J 175°C 2 www.irf.com