Datasheet IRF530N (International Rectifier) - 4
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 9 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| Formato / tamaño de archivo | PDF / 222 Kb |
| Idioma del documento | Inglés |
Fig 5. Fig 6. Fig 7. Fig 8
Versión de texto del documento
IRF530N 1600 20 VGS = 0V, f = 1MHz ID = 9.0A C = C + C C SHORTED iss gs gd , ds C = C V = 80V DS rss gd C = C + C V = 50V DS oss ds gd 16 V = 20V 1200 DS Ciss 12 800 C oss 8 C, Capacitance (pF) 400 4 C GS rss V , Gate-to-Source Voltage (V) FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 10 100 0 10 20 30 40 V , Drain-to-Source Voltage (V) DS Q , Total Gate Charge (nC) G
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) T = 175 C ° J 100 10 10 100µsec 1 1msec 1 T = 25 C ° , Drain-to-Source Current (A) I , Reverse Drain Current (A) SD J I D Tc = 25°C Tj = 175°C 10msec V = 0 V GS Single Pulse 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000 V ,Source-to-Drain Voltage (V) SD VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) T = 175 C ° J 100 10 10 100µsec 1 1msec 1 T = 25 C ° , Drain-to-Source Current (A) I , Reverse Drain Current (A) SD J I D Tc = 25°C Tj = 175°C 10msec V = 0 V GS Single Pulse 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000 V ,Source-to-Drain Voltage (V) SD VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com