Preliminary Datasheet EPC2102 (Efficient Power Conversion) - 5

EPC2102 – Enhancement-Mode GaN Power Transistor Half Bridge Preliminary Specification Sheet Figure 4a: EPC2102-Q1: RDS(on) vs. VGS for Various Temperatures Figure 4b: EPC2102-Q2: RDS(on) vs. VGS for Various Temperatures 12 12 Ω) Ω) m m ( 10 25 °C ( 10 25 °C ce 125 °C ce 125 °C an an 8 st 8 I st D = 20 A ID = 20 A esi esi R R 6 e 6 e tat tat -S 4 -S 4 On On - - ) ) n n o 2 o 2 S( S( D D R R 0 0 2.5 3 3.5 4 4.5 5 2.5 3 3.5 4 4.5 5 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Figure 5a: EPC2102-Q1: Capacitance (Linear Scale) Figure 5b: EPC2102-Q2: Capacitance (Linear Scale) 1.4 2
COSS = CGD + CSD C = C +C
1.8
COSS = CGD + CSD C = C +C
1.2
OSS GD SD OSS GD SD CISS = CGD + CGS C = C
1.6
CISS = CGD + CGS RSS GD C = C RSS GD
) 1 ) F
CRS C S = CG = C D+ C
F 1.4
CRS C S = CG = C D ISS GD GS + C ISS GD GS
(n (n 1.2 ce 0.8 ce tan 1 tan 0.6 aci aci 0.8 ap ap C 0.4 0.6 C 0.4 0.2 0.2 0 0 0 10 20 30 40 50 60 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Figure 5c: EPC2102-Q1: Capacitance (Log Scale) Figure 5d: EPC2102-Q2: Capacitance (Log Scale) 10 10 1 1 ) ) F F (n (n
CO C SS = CG = C D + CS +C D CO C SS = CG = C D + CS +C D
ce
OSS GD SD
ce
OSS GD SD
0.1 tan
CIS C S = CG = CD + CGS
0.1
CIS C S = CGD + = C CGS RSS GD
tan
RSS GD
aci aci
C = C + C CRS C = C + C IS S S = CGD GD GS CRS IS S S = CGD GD GS
ap ap C C 0.01 0.01 0.001 0.001 0 10 20 30 40 50 60 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V)
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