Preliminary Datasheet EPC2102 (Efficient Power Conversion) - 6

EPC2102 – Enhancement-Mode GaN Power Transistor Half Bridge Preliminary Specification Sheet Figure 6a: EPC2102-Q1: Gate Charge Figure 6b: EPC2102-Q2: Gate Charge 5 5 ) ) V V e ( 4 I e ( D = 20 A 4 ID = 20 A ltag VDS = 30 V ltag VDS = 30 V o o V V 3 3 rce rce u u o o -S -S 2 2 -to -to te te Ga Ga - 1 - 1 GS GS V V 0 0 0 2 4 6 8 0 2 4 6 8 QG - Gate Charge (nC) Q G - Gate Charge (nC) Figure 7a: EPC2102-Q1: Reverse Drain-Source Characteristics Figure 7b: EPC2102-Q2: Reverse Drain-Source Characteristics ) 200 ) 200 A
25 °C
A
25 °C
t ( t ( n n
125 °C 125 °C
160 rre 160 rre u u C C in in 120 ra 120 ra -D -D -to -to e 80 e 80 c c our our S 40 S - 40 - I SD I SD 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VSD - Source-to-Drain Voltage (V) VSD - Source-to-Drain Voltage (V) Figure 8a: EPC2102-Q1: Normalized On Resistance vs. Temperature Figure 8b: EPC2102-Q2: Normalized On Resistance vs. Temperature 2 2 ce ID = 20 A ce ID = 20 A 1.8 an VGS = 5 V 1.8 an VGS = 5 V st st esi esi 1.6 R 1.6 R e e tat tat 1.4 -S 1.4 -S On On d 1.2 d e 1.2 e liz liz a a rm 1 rm 1 o o N N 0.8 0.8 -25 0 25 50 75 100 125 150 175 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C)
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