Datasheet BDX33C (ON Semiconductor) - 4
| Fabricante | ON Semiconductor |
| Descripción | Darlington Transistors |
| Páginas / Página | 7 / 4 — BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP). NPN. PNP. BDX33B, 33C. BDX34B, … |
| Formato / tamaño de archivo | PDF / 263 Kb |
| Idioma del documento | Inglés |
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP). NPN. PNP. BDX33B, 33C. BDX34B, 34C. Figure 5. DC Current Gain
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BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) NPN PNP BDX33B, 33C BDX34B, 34C
20,000 20,000 VCE = 4.0 V VCE = 4.0 V 10,000 10,000 TJ = 150°C GAIN 5000 GAIN 5000 TJ = 150°C 3000 3000 2000 2000 25°C 25°C , DC CURRENT 1000 , DC CURRENT 1000 FE FE h -55°C h -55°C 500 500 300 300 200 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 5. DC Current Gain
3.0 3.0 TS) TS) T T J = 25°C J = 25°C 2.6 2.6 TAGE (VOL TAGE (VOL I 4.0 A 6.0 A I C = 2.0 A C = 2.0 A 4.0 A 6.0 A 2.2 2.2 1.8 1.8 OR-EMITTER VOL OR-EMITTER VOL 1.4 1.4 , COLLECT , COLLECT CE CE V V 1.0 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 I I B, BASE CURRENT (mA) B, BASE CURRENT (mA)
Figure 6. Collector Saturation Region
3.0 3.0 T T J = 25°C J = 25°C 2.5 2.5 TS) TS) 2.0 2.0 TAGE (VOL TAGE (VOL VBE(sat) @ IC/IB = 250 , VOL 1.5 , VOL V 1.5 BE @ VCE = 4.0 V V V VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 1.0 1.0 VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 7. “On” Voltages www.onsemi.com 4
20,000 20,000 VCE = 4.0 V VCE = 4.0 V 10,000 10,000 TJ = 150°C GAIN 5000 GAIN 5000 TJ = 150°C 3000 3000 2000 2000 25°C 25°C , DC CURRENT 1000 , DC CURRENT 1000 FE FE h -55°C h -55°C 500 500 300 300 200 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 5. DC Current Gain
3.0 3.0 TS) TS) T T J = 25°C J = 25°C 2.6 2.6 TAGE (VOL TAGE (VOL I 4.0 A 6.0 A I C = 2.0 A C = 2.0 A 4.0 A 6.0 A 2.2 2.2 1.8 1.8 OR-EMITTER VOL OR-EMITTER VOL 1.4 1.4 , COLLECT , COLLECT CE CE V V 1.0 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 I I B, BASE CURRENT (mA) B, BASE CURRENT (mA)
Figure 6. Collector Saturation Region
3.0 3.0 T T J = 25°C J = 25°C 2.5 2.5 TS) TS) 2.0 2.0 TAGE (VOL TAGE (VOL VBE(sat) @ IC/IB = 250 , VOL 1.5 , VOL V 1.5 BE @ VCE = 4.0 V V V VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 1.0 1.0 VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 7. “On” Voltages www.onsemi.com 4