Datasheet BDX33C (ON Semiconductor) - 3
| Fabricante | ON Semiconductor |
| Descripción | Darlington Transistors |
| Páginas / Página | 7 / 3 — BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP). Figure 1. Thermal Response. … |
| Formato / tamaño de archivo | PDF / 263 Kb |
| Idioma del documento | Inglés |
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP). Figure 1. Thermal Response. Figure 2. Active−Region Safe Operating Area
Línea de modelo para esta hoja de datos
Versión de texto del documento
link to page 3 link to page 3
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 TRANSIENT 0.1 ANCE (NORMALIZED) P(pk) 0.1 0.05 RqJC(t) = r(t) RqJC 0.07 0.02 RqJC = 1.92°C/W RESIST 0.05 D CURVES APPLY FOR POWER r(t) EFFECTIVE t1 SINGLE PULSE TRAIN SHOWN 0.03 t2 SINGLE PULSE PULSE READ TIME AT t1 0.02 0.01 THERMAL T DUTY CYCLE, D = t J(pk) - TC = P(pk) RqJC(t) 1/t2 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 t, TIME OR PULSE WIDTH (ms)
Figure 1. Thermal Response
20 20 100 100 ms m 10 500 10 s ms 500 ms 5.0 ms 5.0 ms 5.0 5.0 1.0 ms 1.0 ms (AMP) (AMP) T T C = 25°C dc C = 25°C dc 2.0 2.0 1.0 1.0 BONDING WIRE LIMITED BONDING WIRE LIMITED 0.5 OR CURRENT 0.5 THERMALLY LIMITED @ T THERMALLY LIMITED @ TC = 25°C OR CURRENT C = 25°C (SINGLE PULSE) (SINGLE PULSE) 0.2 0.2 SECOND BREAKDOWN LIMITED SECOND BREAKDOWN LIMITED 0.1 CURVES APPLY BELOW RATED V 0.1 CURVES APPLY BELOW RATED VCEO CEO , COLLECT , COLLECT 0.05 I C 0.05 I C BDX34B BDX33B BDX34C BDX33C 0.02 0.02 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Active−Region Safe Operating Area
There are two limitations on the power handling ability of TJ(pk) = 150°C; TC is variable depending on conditions. a transistor: average junction temperature and second Second breakdown pulse limits are valid for duty cycles to breakdown. Safe operating area curves indicate IC − VCE limits 10% provided TJ(pk) = 150°C. TJ(pk) may be calculated from of the transistor that must be observed for reliable operation, the data in Figure 4. At high case temperatures, thermal i.e., the transistor must not be subjected to greater dissipation limitations will reduce the power that can be handled to values than the curves indicate. The data of Figure 3 is based on less than the limitations imposed by second breakdown. 10,000 300 5000 TJ = 25°C GAIN 3000 200 2000 1000 CURRENT 500 TJ = 25°C ANCE (pF) C 300 100 ob VCE = 4.0 Vdc 200 ACIT IC = 3.0 Adc C 100 70 ib C, CAP , SMALL-SIGNAL 50 50 FE 30 PNP PNP h 20 NPN NPN 10 30 1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Small−Signal Current Gain Figure 4. Capacitance www.onsemi.com 3
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 TRANSIENT 0.1 ANCE (NORMALIZED) P(pk) 0.1 0.05 RqJC(t) = r(t) RqJC 0.07 0.02 RqJC = 1.92°C/W RESIST 0.05 D CURVES APPLY FOR POWER r(t) EFFECTIVE t1 SINGLE PULSE TRAIN SHOWN 0.03 t2 SINGLE PULSE PULSE READ TIME AT t1 0.02 0.01 THERMAL T DUTY CYCLE, D = t J(pk) - TC = P(pk) RqJC(t) 1/t2 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 t, TIME OR PULSE WIDTH (ms)
Figure 1. Thermal Response
20 20 100 100 ms m 10 500 10 s ms 500 ms 5.0 ms 5.0 ms 5.0 5.0 1.0 ms 1.0 ms (AMP) (AMP) T T C = 25°C dc C = 25°C dc 2.0 2.0 1.0 1.0 BONDING WIRE LIMITED BONDING WIRE LIMITED 0.5 OR CURRENT 0.5 THERMALLY LIMITED @ T THERMALLY LIMITED @ TC = 25°C OR CURRENT C = 25°C (SINGLE PULSE) (SINGLE PULSE) 0.2 0.2 SECOND BREAKDOWN LIMITED SECOND BREAKDOWN LIMITED 0.1 CURVES APPLY BELOW RATED V 0.1 CURVES APPLY BELOW RATED VCEO CEO , COLLECT , COLLECT 0.05 I C 0.05 I C BDX34B BDX33B BDX34C BDX33C 0.02 0.02 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Active−Region Safe Operating Area
There are two limitations on the power handling ability of TJ(pk) = 150°C; TC is variable depending on conditions. a transistor: average junction temperature and second Second breakdown pulse limits are valid for duty cycles to breakdown. Safe operating area curves indicate IC − VCE limits 10% provided TJ(pk) = 150°C. TJ(pk) may be calculated from of the transistor that must be observed for reliable operation, the data in Figure 4. At high case temperatures, thermal i.e., the transistor must not be subjected to greater dissipation limitations will reduce the power that can be handled to values than the curves indicate. The data of Figure 3 is based on less than the limitations imposed by second breakdown. 10,000 300 5000 TJ = 25°C GAIN 3000 200 2000 1000 CURRENT 500 TJ = 25°C ANCE (pF) C 300 100 ob VCE = 4.0 Vdc 200 ACIT IC = 3.0 Adc C 100 70 ib C, CAP , SMALL-SIGNAL 50 50 FE 30 PNP PNP h 20 NPN NPN 10 30 1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Small−Signal Current Gain Figure 4. Capacitance www.onsemi.com 3