Datasheet BDX33C (ON Semiconductor)
| Fabricante | ON Semiconductor |
| Descripción | Darlington Transistors |
| Páginas / Página | 7 / 1 — DATA SHEET. www.onsemi.com. DARLINGTON. 10 AMPERE. COMPLEMENTARY SILICON. … |
| Formato / tamaño de archivo | PDF / 263 Kb |
| Idioma del documento | Inglés |
DATA SHEET. www.onsemi.com. DARLINGTON. 10 AMPERE. COMPLEMENTARY SILICON. POWER TRANSISTORS. 80−100 VOLTS, 65 WATTS. Features. TO−220
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DATA SHEET www.onsemi.com
Darlington Complementary
DARLINGTON
Silicon Power Transistors
10 AMPERE COMPLEMENTARY SILICON
BDX33B, BDX33C (NPN)
POWER TRANSISTORS
BDX34B, BDX34C (PNP)
80−100 VOLTS, 65 WATTS
These devices are designed for general purpose and low speed switching applications.
Features
• High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B = 100 Vdc (min) − BDX33C, BDX334C • 1 Low Collector−Emitter Saturation Voltage 2 3 VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc
TO−220
− BDX33B, 33C/34B, 34C
CASE 221A
• Monolithic Construction with Build−In Base−Emitter Shunt Resistors
STYLE 1
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS MARKING DIAGRAM Rating Symbol Value Unit
Collector−Emitter Voltage VCEO Vdc BDX33B, BDX34B 80 BDX33C, BDX34C 100 BDX3xyG Collector−Base Voltage VCB Vdc AY WW BDX33B, BDX34B 80 BDX33C, BDX34C 100 Emitter−Base Voltage VEB 5.0 Vdc Collector Current IC 10 Adc BDX3xy = Device Code Continuous 15 x = 3 or 4 Peak y = B or C Base Current I A = Assembly Location B 0.25 Adc Y = Year Total Device Dissipation @ TC = 25°C PD 70 W WW = Work Week Derate above 25°C 0.56 W/°C G = Pb−Free Package Operating and Storage Junction TJ, Tstg −65 to +150 °C Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the
ORDERING INFORMATION
device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
THERMAL CHARACTERISTICS
NOTE: Some of the devices on this data sheet have been
DISCONTINUED
. Please refer to the table on page 5.
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.78 °C/W *For additional information on our Pb−Free strategy and soldering details, please download the
onsem
i Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2024 − Rev. 15 BDX33B/D
DATA SHEET www.onsemi.com
Darlington Complementary
DARLINGTON
Silicon Power Transistors
10 AMPERE COMPLEMENTARY SILICON
BDX33B, BDX33C (NPN)
POWER TRANSISTORS
BDX34B, BDX34C (PNP)
80−100 VOLTS, 65 WATTS
These devices are designed for general purpose and low speed switching applications.
Features
• High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B = 100 Vdc (min) − BDX33C, BDX334C • 1 Low Collector−Emitter Saturation Voltage 2 3 VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc
TO−220
− BDX33B, 33C/34B, 34C
CASE 221A
• Monolithic Construction with Build−In Base−Emitter Shunt Resistors
STYLE 1
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS MARKING DIAGRAM Rating Symbol Value Unit
Collector−Emitter Voltage VCEO Vdc BDX33B, BDX34B 80 BDX33C, BDX34C 100 BDX3xyG Collector−Base Voltage VCB Vdc AY WW BDX33B, BDX34B 80 BDX33C, BDX34C 100 Emitter−Base Voltage VEB 5.0 Vdc Collector Current IC 10 Adc BDX3xy = Device Code Continuous 15 x = 3 or 4 Peak y = B or C Base Current I A = Assembly Location B 0.25 Adc Y = Year Total Device Dissipation @ TC = 25°C PD 70 W WW = Work Week Derate above 25°C 0.56 W/°C G = Pb−Free Package Operating and Storage Junction TJ, Tstg −65 to +150 °C Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the
ORDERING INFORMATION
device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
THERMAL CHARACTERISTICS
NOTE: Some of the devices on this data sheet have been
DISCONTINUED
. Please refer to the table on page 5.
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.78 °C/W *For additional information on our Pb−Free strategy and soldering details, please download the
onsem
i Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2024 − Rev. 15 BDX33B/D