Datasheet IRF2804, IRF2804S, IRF2804L (International Rectifier) - 8
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 12 / 8 — D.U.T. Fig 17. Fig 18a. Fig 18b |
| Formato / tamaño de archivo | PDF / 292 Kb |
| Idioma del documento | Inglés |
D.U.T. Fig 17. Fig 18a. Fig 18b
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IRF2804/S/L Driver Gate Drive P.W.
D.U.T
Period D = P.W. Period + V * Circuit Layout Considerations GS=10V • Low Stray Inductance • Ground Plane - • Low Leakage Inductance Current Transformer D.U.T. ISD Waveform + Reverse Recovery Body Diode Forward Current Current - + - di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD • dv/dt controlled by R V G DD Re-Applied RG + Voltage • Driver same type as D.U.T. Body Diode Forward Drop • ISD controlled by Duty Factor "D" - Inductor Curent • D.U.T. - Device Under Test Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices
Fig 17.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs RD VDS VGS D.U.T. RG +-VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
Fig 18a.
Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf
Fig 18b.
Switching Time Waveforms 8 www.irf.com
D.U.T
Period D = P.W. Period + V * Circuit Layout Considerations GS=10V • Low Stray Inductance • Ground Plane - • Low Leakage Inductance Current Transformer D.U.T. ISD Waveform + Reverse Recovery Body Diode Forward Current Current - + - di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD • dv/dt controlled by R V G DD Re-Applied RG + Voltage • Driver same type as D.U.T. Body Diode Forward Drop • ISD controlled by Duty Factor "D" - Inductor Curent • D.U.T. - Device Under Test Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices
Fig 17.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs RD VDS VGS D.U.T. RG +-VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
Fig 18a.
Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf
Fig 18b.
Switching Time Waveforms 8 www.irf.com