Datasheet IRF2804, IRF2804S, IRF2804L (International Rectifier)

PD - 94436C
AUTOMOTIVE MOSFET
IRF2804 IRF2804S IRF2804L
Features
HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 40V l 175°C Operating Temperature l Fast Switching RDS(on) = 2.0mΩ‰ G l Repetitive Avalanche Allowed up to Tjmax
Description
S ID = 75A Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features com- bine to make this design an extremely efficient and reliable device for use in Automotive applica- TO-220AB D2Pak TO-262 tions and a wide variety of other applications. IRF2804 IRF2804S IRF2804L
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 280 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9) 200 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 75 IDM Pulsed Drain Current c 1080 PD @TC = 25°C Maximum Power Dissipation 330 W Linear Derating Factor 2.2 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy (Thermally Limited) d 670 mJ EAS (tested) Single Pulse Avalanche Energy Tested Value i 1160 I Avalanche Current c AR See Fig.12a,12b,15,16 A E Repetitive Avalanche Energy h AR mJ TJ Operating Junction and -55 to + 175 °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.45 °C/W Rθ Case-to-Sink, Flat, Greased Surface CS 0.50 ––– RθJA Junction-to-Ambient ––– 62 RθJA Junction-to-Ambient (PCB Mount, steady state)j ––– 40 HEXFET® is a registered trademark of International Rectifier. www.irf.com 1 08/27/03