IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 10 VGS TOP -15V -10V ) -8.0V -7.0V (A) t (A -6.0V n T = 25 C ° -5.5V J -5.0V rre rrent BOTTOM -4.5V u u T = 150 C C J ° e rc u o 1 1 -S -Source C o -to in -4.5V ra rain-t D D , D -I , D -I 20μs PULSE WIDTH V = DS -50V T = 2 J 5 °C 20μs PULSE WIDTH 0.1 0.1 1 10 100 4 5 6 7 8 9 10 -V , Drain-to-Source Voltage (V) DS -V , Gate-to-Source Voltage (V) GS Fig. 1 - Typical Output CharacteristicsFig. 2 - Typical Transfer Characteristics 10 2.5 VGS I = D -1.8A TOP -15V ce -10V ) -8.0V -7.0V t (A -6.0V n sistan 2.0 -5.5V e -5.0V rre BOTTOM -4.5V R u n C e O 1.5 rc u rce lized) o 1 ou a -S -S -to orm -4.5V 1.0 in -to (N in ra ra D 0.5 ) -I , D n (o 20μs PULSE WIDTH T = , D DS J 150 °C V = GS -10V 0.1 R 0.0 1 10 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 -V , Drain-to-Source Voltage (V) DS T , Junction Temperature ( C ° ) J Fig. 1 - Typical Output CharacteristicsFig. 3 - Normalized On-Resistance vs. Temperature S21-0373-Rev. E, 19-Apr-2021 3 Document Number: 91284 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000