Datasheet IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 (Vishay) - 4
| Fabricante | Vishay |
| Descripción | Power MOSFET |
| Páginas / Página | 13 / 4 — IRFR9310, IRFU9310, SiHFR9310, SiHFU9310. Fig. 4 - Typical Capacitance … |
| Formato / tamaño de archivo | PDF / 266 Kb |
| Idioma del documento | Inglés |
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310. Fig. 4 - Typical Capacitance vs. Drain-to-Source Voltage
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IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
www.vishay.com Vishay Siliconix 500 10 VGS = 0V, f = 1MHz C = C + C C SHORTED iss gs gd , ds C = C ) rss gd A 400 C = C + C oss ds gd t ( n F) p rre u C 300 iss C nce ( in T = 150 C ° J ta ra 1 D e 200 rs Capaci e v T = 25 C ° J C, Coss e 100 SD-I , R Crss V = 0 V GS 0 0.1 1 10 100 1.0 2.0 3.0 4.0 5.0 -V , Drain-to-Source Voltage (V) DS -V ,Source-to-Drain Voltage (V) SD
Fig. 4 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Source-Drain Diode Forward Voltage
20 100 ID = -1.1A OPERATION IN THIS AREA LIMITED ) V =-320V BY RDS(on) V DS V =-200V DS 16 V =-80V DS ) tage ( A t (t (A 10 n 10us e Vol 12 c rrerre u C Sour in 100us 8 -to- ra te D a 1 D G -I , D , 1ms 4 , GS -V T = 25 C ° C 10ms FOR TEST CIRCUIT T = 150 C ° J SEE FIGURE 13 Single Pulse 0 0.1 0 4 8 12 16 10 100 1000 Q , Total Gate Charge (nC) G -V , Drain-to-Source Voltage (V) DS
Fig. 5 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Maximum Safe Operating Area
S21-0373-Rev. E, 19-Apr-2021
4
Document Number: 91284 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix 500 10 VGS = 0V, f = 1MHz C = C + C C SHORTED iss gs gd , ds C = C ) rss gd A 400 C = C + C oss ds gd t ( n F) p rre u C 300 iss C nce ( in T = 150 C ° J ta ra 1 D e 200 rs Capaci e v T = 25 C ° J C, Coss e 100 SD-I , R Crss V = 0 V GS 0 0.1 1 10 100 1.0 2.0 3.0 4.0 5.0 -V , Drain-to-Source Voltage (V) DS -V ,Source-to-Drain Voltage (V) SD
Fig. 4 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Source-Drain Diode Forward Voltage
20 100 ID = -1.1A OPERATION IN THIS AREA LIMITED ) V =-320V BY RDS(on) V DS V =-200V DS 16 V =-80V DS ) tage ( A t (t (A 10 n 10us e Vol 12 c rrerre u C Sour in 100us 8 -to- ra te D a 1 D G -I , D , 1ms 4 , GS -V T = 25 C ° C 10ms FOR TEST CIRCUIT T = 150 C ° J SEE FIGURE 13 Single Pulse 0 0.1 0 4 8 12 16 10 100 1000 Q , Total Gate Charge (nC) G -V , Drain-to-Source Voltage (V) DS
Fig. 5 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Maximum Safe Operating Area
S21-0373-Rev. E, 19-Apr-2021
4
Document Number: 91284 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000