Datasheet IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 (Vishay) - 2

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - - 110 Maximum junction-to-ambient °C/W (PCB mount) a RthJA - - 50 Maximum junction-to-case (drain) RthJC - - 2.5
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material)
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = - 250 μA - 400 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.41 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = - 400 V, VGS = 0 V - - - 100 Zero gate voltage drain current IDSS μA VDS = - 320 V, VGS = 0 V, TJ = 125 °C - - - 500 Drain-source on-state resistance RDS(on) VGS = - 10 V ID = - 1.1 Ab - - 7.0 Ω Forward transconductance gfs VDS = - 50 V, ID = - 1.1 A 0.91 - - S
Dynamic
Input capacitance Ciss V - 270 - GS = 0 V, Output capacitance Coss VDS = - 25 V, - 50 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 8.0 - Total gate charge Qg - - 13 I Gate-source charge Qgs V D = - 1.1 A, VDS = - 320 V, GS = - 10 V - - 3.2 nC see fig. 6 and 13b Gate-drain charge Qgd - - 5.0 Turn-on delay time td(on) - 11 - Rise time tr V - 10 - DD = - 200 V, ID = - 1.1 A, ns R Turn-off delay time t g = 21 Ω, RD = 180 Ω, see fig. 10b d(off) - 25 - Fall time tf - 24 - D Internal drain inductance L Between lead, D - 4.5 - 6 mm (0.25") from package and center of nH G Internal source inductance LS die contactc - 7.5 - S
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I MOSFET symbol D S - - - 1.9 showing the A integral reverse G Pulsed diode forward current a ISM p - n junction diode S - - - 7.6 Body diode voltage VSD TJ = 25 °C, IS = - 1.1 A, VGS = 0 Vb - - - 4.0 V Body diode reverse recovery time trr - 170 260 ns TJ = 25 °C, IF = -1.1 A, dI/dt = 100 A/μsb Body diode reverse recovery charge Qrr - 640 960 nC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % c. This is applied for IPAK, LS of DPAK is measured between lead and center of die contact S21-0373-Rev. E, 19-Apr-2021
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