Datasheet SEMiX302GB066HDs (Semikron) - 2

SEMiX302GB066HDs Characteristics Symbol Conditions min. typ. max. Unit Inverse diode
V I F = VEC F = 300 A Tj = 25 °C 1.4 1.60 V VGE = 0 V chip Tj = 150 °C 1.4 1.6 V VF0 Tj = 25 °C 0.9 1 1.1 V Tj = 150 °C 0.75 0.85 0.95 V rF Tj = 25 °C 1.0 1.3 1.7 m Tj = 150 °C 1.5 1.8 2.2 m
SEMiX® 2s
I I RRM F = 300 A Tj = 150 °C 240 A di/dtoff = 3600 A/µs Qrr Tj = 150 °C 35 µC VGE = -8 V E Trench IGBT Modules rr V T CC = 300 V j = 150 °C 7.5 mJ Rth(j-c) per diode 0.19 K/W
Module SEMiX302GB066HDs
LCE 18 nH RCC'+EE' TC = 25 °C 0.7 m res., terminal-chip TC = 125 °C 1 m
Features
Rth(c-s) per module 0.045 K/W • Homogeneous Si M • Trench = Trenchgate technology s to heat sink (M5) 3 5 Nm • VCE(sat) with positive temperature Mt to terminals (M6) 2.5 5 Nm coefficient w 250 g • UL recognised file no. E63532
Temperature sensor Typical Applications*
R100 Tc=100°C (R25=5 k) 493 ± 5% 3550 B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; K • Matrix Converter ±2% • Resonant Inverter • Current Source Inverter
Remarks
• Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance
GB 2 Rev. 1 – 13.01.2012 © by SEMIKRON