Datasheet SEMiX302GB066HDs (Semikron)

SEMiX302GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT
VCES Tj = 25 °C 600 V IC Tc = 25 °C 379 A Tj = 175 °C Tc = 80 °C 286 A ICnom 300 A ICRM ICRM = 2xICnom 600 A VGES -20 ... 20 V
SEMiX® 2s
VCC = 360 V V t GE ≤ 15 V psc 6 µs Tj = 150 °C Trench IGBT Modules VCES ≤ 600 V Tj -40 ... 175 °C
Inverse diode SEMiX302GB066HDs
IF Tc = 25 °C 419 A Tj = 175 °C Tc = 80 °C 307 A IFnom 300 A
Features
IFRM IFRM = 2xIFnom 600 A • Homogeneous Si IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1400 A • Trench = Trenchgate technology T • V j -40 ... 175 °C CE(sat) with positive temperature coefficient
Module
• UL recognised file no. E63532 It(RMS) Tterminal = 80 °C 600 A
Typical Applications*
Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V • Matrix Converter • Resonant Inverter
Characteristics
• Current Source Inverter
Symbol Conditions min. typ. max. Unit Remarks IGBT
• Case temperature limited to TC=125°C V I CE(sat) C = 300 A Tj = 25 °C 1.45 1.85 V max. VGE = 15 V • Product reliability results are valid for chiplevel Tj = 150 °C 1.7 2.1 V Tj=150°C VCE0 Tj = 25 °C 0.9 1 V • For short circuit: Soft RGoff T recommended j = 150 °C 0.85 0.9 V • Take care of over-voltage caused by rCE Tj = 25 °C 1.8 2.8 m VGE = 15 V stray inductance Tj = 150 °C 2.8 4.0 m VGE(th) VGE=VCE, IC = 4.8 mA 5 5.8 6.5 V ICES V T GE = 0 V j = 25 °C 0.15 0.45 mA VCE = 600 V Tj = 150 °C mA Cies f = 1 MHz 18.5 nF VCE = 25 V Coes f = 1 MHz 1.15 nF VGE = 0 V Cres f = 1 MHz 0.55 nF QG VGE = - 8 V...+ 15 V 2400 nC RGint Tj = 25 °C 1.00 td(on) VCC = 300 V 110 ns I t C = 300 A r 85 ns Tj = 150 °C Eon 11.5 mJ RG on = 5.1 td(off) R 820 ns G off = 5.1 tf 70 ns Eoff 15 mJ Rth(j-c) per IGBT 0.16 K/W
GB © by SEMIKRON Rev. 1 – 13.01.2012 1