Datasheet 2N5087 (ON Semiconductor) - 6

FabricanteON Semiconductor
DescripciónAmplifier Transistor PNP Silicon
Páginas / Página8 / 6 — 2N5087. TYPICAL DYNAMIC CHARACTERISTICS. Figure 11. Turn−On Time. Figure …
Revisión5
Formato / tamaño de archivoPDF / 259 Kb
Idioma del documentoInglés

2N5087. TYPICAL DYNAMIC CHARACTERISTICS. Figure 11. Turn−On Time. Figure 12. Turn−Off Time

2N5087 TYPICAL DYNAMIC CHARACTERISTICS Figure 11 Turn−On Time Figure 12 Turn−Off Time

Línea de modelo para esta hoja de datos

Versión de texto del documento

2N5087 TYPICAL DYNAMIC CHARACTERISTICS
500 1000 V V 700 CC = -  3.0 V 300 CC = 3.0 V I I C/IB = 10 500 C/IB = 10 200 T I J = 25°C B1 = IB2 t 300 s TJ = 25°C 100 200 70 50 100 t, TIME (ns) 30 t, TIME (ns) 70 t 50 20 r tf t 30 d @ VBE(off) = 0.5 V 10 20 7.0 5.0 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 -1.0 -  2.0 -  3.0 -  5.0 -  7.0 -10 -  20 -  30 -  50 -  70 -100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 11. Turn−On Time Figure 12. Turn−Off Time
500 10 T T J = 25°C J = 25°C 7.0 300 VCE = 20 V Cib 5.0 5.0 V (pF) 200 ANCE 3.0 ACIT 100 2.0 Cob C, CAP 70 50 1.0 f, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) T 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
Figure 13. Current−Gain — Bandwidth Product Figure 14. Capacitance
20 200 VCE = -10 Vdc VCE = 10 Vdc 10 f = 1.0 kHz f = 1.0 kHz ) 100 Ω T T 7.0 A = 25°C m 70 A = 25°C 5.0 50 ANCE ( mhos) 3.0 30 2.0 20 ADMITT 1.0 10 , INPUT IMPEDANCE (k 0.7 7.0 ieh 0.5 5.0 h , OUTPUT oe 0.3 3.0 0.2 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 15. Input Impedance Figure 16. Output Admittance http://onsemi.com 5