Datasheet 2N5087 (ON Semiconductor) - 7
| Fabricante | ON Semiconductor |
| Descripción | Amplifier Transistor PNP Silicon |
| Páginas / Página | 8 / 7 — 2N5087. Figure 17. Thermal Response. DESIGN NOTE: USE OF THERMAL RESPONSE … |
| Revisión | 5 |
| Formato / tamaño de archivo | PDF / 259 Kb |
| Idioma del documento | Inglés |
2N5087. Figure 17. Thermal Response. DESIGN NOTE: USE OF THERMAL RESPONSE DATA. Figure 18. Active−Region Safe Operating Area
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2N5087
1.0 0.7 D = 0.5 0.5 ANCE 0.3 0.2 RESIST 0.2 0.1 0.1 FIGURE 19 0.07 0.05 DUTY CYCLE, D = t1/t2 (NORMALIZED) 0.05 P(pk) D CURVES APPLY FOR POWER 0.02 PULSE TRAIN SHOWN 0.03 t READ TIME AT t 1 1 (SEE AN569) 0.02 0.01 Z SINGLE PULSE qJA(t) = r(t) w RqJA t r(t) TRANSIENT THERMAL 2 TJ(pk) - TA = P(pk) ZqJA(t) 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k t, TIME (ms)
Figure 17. Thermal Response
400 The safe operating area curves indicate IC−VCE limits of 1.0 ms 10 ms the transistor that must be observed for reliable operation. 200 100 ms Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. 100 TC = 25°C 1.0 s The data of Figure 18 is based upon T dc J(pk) = 150°C; TC or 60 TA = 25°C TA is variable depending upon conditions. Pulse curves are 40 dc valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 17. At high case 20 TJ = 150°C or ambient temperatures, thermal limitations will reduce the , COLLECTOR CURRENT (mA) power than can be handled to values less than the limitations 10 I C CURRENT LIMIT imposed by second breakdown. THERMAL LIMIT 6.0 SECOND BREAKDOWN LIMIT 4.0
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
2.0 4.0 6.0 8.0 10 20 40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the
Figure 18. Active−Region Safe Operating Area
device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. 104 To find Z VCC = 30 V qJA(t), multiply the value obtained from Figure 17 by the steady state value R 103 qJA. I Example: CEO 102 The 2N5087 is dissipating 2.0 watts peak under the follow- ing conditions: 101 I t CBO 1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) AND Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the 100 ICEX @ VBE(off) = 3.0 V reading of r(t) is 0.22. , COLLECTOR CURRENT (nA) The peak rise in junction temperature is therefore I C 10-1 DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C. For more information, see ON Semiconductor Application 10-2-40 -20 0 +20 +40 +60 +80 +100 +120 +140 +160 Note AN569/D, available from the Literature Distribution T Center or on our website at
www.onsemi.com
. J, JUNCTION TEMPERATURE (°C)
Figure 19. Typical Collector Leakage Current http://onsemi.com 6
2N5087
1.0 0.7 D = 0.5 0.5 ANCE 0.3 0.2 RESIST 0.2 0.1 0.1 FIGURE 19 0.07 0.05 DUTY CYCLE, D = t1/t2 (NORMALIZED) 0.05 P(pk) D CURVES APPLY FOR POWER 0.02 PULSE TRAIN SHOWN 0.03 t READ TIME AT t 1 1 (SEE AN569) 0.02 0.01 Z SINGLE PULSE qJA(t) = r(t) w RqJA t r(t) TRANSIENT THERMAL 2 TJ(pk) - TA = P(pk) ZqJA(t) 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k t, TIME (ms)
Figure 17. Thermal Response
400 The safe operating area curves indicate IC−VCE limits of 1.0 ms 10 ms the transistor that must be observed for reliable operation. 200 100 ms Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. 100 TC = 25°C 1.0 s The data of Figure 18 is based upon T dc J(pk) = 150°C; TC or 60 TA = 25°C TA is variable depending upon conditions. Pulse curves are 40 dc valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 17. At high case 20 TJ = 150°C or ambient temperatures, thermal limitations will reduce the , COLLECTOR CURRENT (mA) power than can be handled to values less than the limitations 10 I C CURRENT LIMIT imposed by second breakdown. THERMAL LIMIT 6.0 SECOND BREAKDOWN LIMIT 4.0
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
2.0 4.0 6.0 8.0 10 20 40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the
Figure 18. Active−Region Safe Operating Area
device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. 104 To find Z VCC = 30 V qJA(t), multiply the value obtained from Figure 17 by the steady state value R 103 qJA. I Example: CEO 102 The 2N5087 is dissipating 2.0 watts peak under the follow- ing conditions: 101 I t CBO 1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) AND Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the 100 ICEX @ VBE(off) = 3.0 V reading of r(t) is 0.22. , COLLECTOR CURRENT (nA) The peak rise in junction temperature is therefore I C 10-1 DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C. For more information, see ON Semiconductor Application 10-2-40 -20 0 +20 +40 +60 +80 +100 +120 +140 +160 Note AN569/D, available from the Literature Distribution T Center or on our website at
www.onsemi.com
. J, JUNCTION TEMPERATURE (°C)
Figure 19. Typical Collector Leakage Current http://onsemi.com 6