Datasheet 2N5087 (ON Semiconductor) - 5
| Fabricante | ON Semiconductor |
| Descripción | Amplifier Transistor PNP Silicon |
| Páginas / Página | 8 / 5 — 2N5087. TYPICAL STATIC CHARACTERISTICS. Figure 6. DC Current Gain. Figure … |
| Revisión | 5 |
| Formato / tamaño de archivo | PDF / 259 Kb |
| Idioma del documento | Inglés |
2N5087. TYPICAL STATIC CHARACTERISTICS. Figure 6. DC Current Gain. Figure 7. Collector Saturation Region
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2N5087 TYPICAL STATIC CHARACTERISTICS
400 TJ = 125°C 25°C 200 -55°C 100 FE 80 h , DC CURRENT GAIN 60 VCE = 1.0 V VCE = 10 V 40 0.003 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)
Figure 6. DC Current Gain
1.0 TS) 100 T T I A = 25°C A = 25°C B = 400 mA (VOL PULSE WIDTH = 300 ms 350 mA 0.8 80 DUTY CYCLE ≤ 2.0% TAGE 300 mA 250 mA IC = 1.0 mA 10 mA 50 mA 100 mA 0.6 60 200 mA 150 mA 0.4 40 100 mA 0.2 , COLLECTOR CURRENT (mA) 20 I C 50 mA , COLLECTOR-EMITTER VOL CEV 0 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40 IB, BASE CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Collector Saturation Region Figure 8. Collector Characteristics
1.4 1.6 T C) J = 25°C ° *APPLIES for IC/IB ≤ hFE/2 1.2 0.8 TS) 1.0 *q 25°C to 125°C VC for VCE(sat) (VOL 0 0.8 - 55°C to 25°C VBE(sat) @ IC/IB = 10 TAGE 0.6 0.8 , VOL VBE(on) @ VCE = 1.0 V V TURE COEFFICIENTS (mV/ 25°C to 125°C 0.4 1.6 0.2 q TEMPERA VB for VBE - 55°C to 25°C V , CE(sat) @ IC/IB = 10 Vθ 0 2.4 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 9. “On” Voltages Figure 10. Temperature Coefficients http://onsemi.com 4
400 TJ = 125°C 25°C 200 -55°C 100 FE 80 h , DC CURRENT GAIN 60 VCE = 1.0 V VCE = 10 V 40 0.003 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)
Figure 6. DC Current Gain
1.0 TS) 100 T T I A = 25°C A = 25°C B = 400 mA (VOL PULSE WIDTH = 300 ms 350 mA 0.8 80 DUTY CYCLE ≤ 2.0% TAGE 300 mA 250 mA IC = 1.0 mA 10 mA 50 mA 100 mA 0.6 60 200 mA 150 mA 0.4 40 100 mA 0.2 , COLLECTOR CURRENT (mA) 20 I C 50 mA , COLLECTOR-EMITTER VOL CEV 0 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40 IB, BASE CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Collector Saturation Region Figure 8. Collector Characteristics
1.4 1.6 T C) J = 25°C ° *APPLIES for IC/IB ≤ hFE/2 1.2 0.8 TS) 1.0 *q 25°C to 125°C VC for VCE(sat) (VOL 0 0.8 - 55°C to 25°C VBE(sat) @ IC/IB = 10 TAGE 0.6 0.8 , VOL VBE(on) @ VCE = 1.0 V V TURE COEFFICIENTS (mV/ 25°C to 125°C 0.4 1.6 0.2 q TEMPERA VB for VBE - 55°C to 25°C V , CE(sat) @ IC/IB = 10 Vθ 0 2.4 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 9. “On” Voltages Figure 10. Temperature Coefficients http://onsemi.com 4