Datasheet MBT3946DW1T1G, SMBT3946DW1T1G (ON Semiconductor) - 3
| Fabricante | ON Semiconductor |
| Descripción | Complementary General Purpose Transistor |
| Páginas / Página | 13 / 3 — MBT3946DW1T1G, SMBT3946DW1T1G. Table 4. ELECTRICAL CHARACTERISTICS. … |
| Revisión | 7 |
| Formato / tamaño de archivo | PDF / 251 Kb |
| Idioma del documento | Inglés |
MBT3946DW1T1G, SMBT3946DW1T1G. Table 4. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. SWITCHING CHARACTERISTICS
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MBT3946DW1T1G, SMBT3946DW1T1G Table 4. ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Max Unit
Output Admittance hoe mmhos (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN) 1.0 40 (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP) 3.0 60 Noise Figure NF dB (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 kW, f = 1.0 kHz) (NPN) − 5.0 (VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 kW, f = 1.0 kHz) (PNP) − 4.0
SWITCHING CHARACTERISTICS
Delay Time (VCC = 3.0 Vdc, VBE = −0.5 Vdc) (NPN) td − 35 (VCC = −3.0 Vdc, VBE = 0.5 Vdc) (PNP) − 35 ns Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) (NPN) tr − 35 (IC = −10 mAdc, IB1 = −1.0 mAdc) (PNP) − 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) (NPN) ts − 200 (VCC = −3.0 Vdc, IC = −10 mAdc) (PNP) − 225 ns Fall Time (IB1 = IB2 = 1.0 mAdc) (NPN) tf − 50 (IB1 = IB2 = −1.0 mAdc) (PNP) − 75 2. Pulse Test: Pulse WidthĂ≤Ă300Ăms; Duty CycleĂ≤Ă2.0%.
(NPN)
+3 V +3 V DUTY CYCLE = 2% 10 < t t 1 < 500 ms 1 +10.9 V 300 ns +10.9 V DUTY CYCLE = 2% 275 275 10 k 10 k 0 -0.5 V Cs < 4 pF* < 1 ns 1N916 Cs < 4 pF* -9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 10 5000 VCC = 40 V (NPN) (NPN) 3000 7.0 IC/IB = 10 2000 5.0 1000 700 ANCE (pF) Cibo 3.0 500 ACIT Q Q, CHARGE (pC) 300 T CAP 2.0 Cobo 200 QA 100 70 1.0 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance Figure 4. Charge Data http://onsemi.com 3
(TA = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Max Unit
Output Admittance hoe mmhos (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN) 1.0 40 (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP) 3.0 60 Noise Figure NF dB (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 kW, f = 1.0 kHz) (NPN) − 5.0 (VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 kW, f = 1.0 kHz) (PNP) − 4.0
SWITCHING CHARACTERISTICS
Delay Time (VCC = 3.0 Vdc, VBE = −0.5 Vdc) (NPN) td − 35 (VCC = −3.0 Vdc, VBE = 0.5 Vdc) (PNP) − 35 ns Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) (NPN) tr − 35 (IC = −10 mAdc, IB1 = −1.0 mAdc) (PNP) − 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) (NPN) ts − 200 (VCC = −3.0 Vdc, IC = −10 mAdc) (PNP) − 225 ns Fall Time (IB1 = IB2 = 1.0 mAdc) (NPN) tf − 50 (IB1 = IB2 = −1.0 mAdc) (PNP) − 75 2. Pulse Test: Pulse WidthĂ≤Ă300Ăms; Duty CycleĂ≤Ă2.0%.
(NPN)
+3 V +3 V DUTY CYCLE = 2% 10 < t t 1 < 500 ms 1 +10.9 V 300 ns +10.9 V DUTY CYCLE = 2% 275 275 10 k 10 k 0 -0.5 V Cs < 4 pF* < 1 ns 1N916 Cs < 4 pF* -9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 10 5000 VCC = 40 V (NPN) (NPN) 3000 7.0 IC/IB = 10 2000 5.0 1000 700 ANCE (pF) Cibo 3.0 500 ACIT Q Q, CHARGE (pC) 300 T CAP 2.0 Cobo 200 QA 100 70 1.0 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance Figure 4. Charge Data http://onsemi.com 3