Datasheet MBT3946DW1T1G, SMBT3946DW1T1G (ON Semiconductor) - 2
| Fabricante | ON Semiconductor |
| Descripción | Complementary General Purpose Transistor |
| Páginas / Página | 13 / 2 — MBT3946DW1T1G, SMBT3946DW1T1G. Table 3. ELECTRICAL CHARACTERISTICS. … |
| Revisión | 7 |
| Formato / tamaño de archivo | PDF / 251 Kb |
| Idioma del documento | Inglés |
MBT3946DW1T1G, SMBT3946DW1T1G. Table 3. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. OFF CHARACTERISTICS
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MBT3946DW1T1G, SMBT3946DW1T1G Table 3. ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2) V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) (NPN) 40 − (IC = −1.0 mAdc, IB = 0) (PNP) −40 − Collector−Base Breakdown Voltage V(BR)CBO Vdc (IC = 10 mAdc, IE = 0) (NPN) 60 − (IC = −10 mAdc, IE = 0) (PNP) −40 − Emitter−Base Breakdown Voltage V(BR)EBO Vdc (IE = 10 mAdc, IC = 0) (NPN) 6.0 − (IE = −10 mAdc, IC = 0) (PNP) −5.0 − Base Cutoff Current IBL nAdc (VCE = 30 Vdc, VEB = 3.0 Vdc) (NPN) − 50 (VCE = −30 Vdc, VEB = −3.0 Vdc) (PNP) − −50 Collector Cutoff Current ICEX nAdc (VCE = 30 Vdc, VEB = 3.0 Vdc) (NPN) − 50 (VCE = −30 Vdc, VEB = −3.0 Vdc) (PNP) − −50
ON CHARACTERISTICS
(Note 2) DC Current Gain hFE − (IC = 0.1 mAdc, VCE = 1.0 Vdc) (NPN) 40 − (IC = 1.0 mAdc, VCE = 1.0 Vdc) 70 − (IC = 10 mAdc, VCE = 1.0 Vdc) 100 300 (IC = 50 mAdc, VCE = 1.0 Vdc) 60 − (IC = 100 mAdc, VCE = 1.0 Vdc) 30 − (IC = −0.1 mAdc, VCE = −1.0 Vdc) (PNP) 60 − (IC = −1.0 mAdc, VCE = −1.0 Vdc) 80 − (IC = −10 mAdc, VCE = −1.0 Vdc) 100 300 (IC = −50 mAdc, VCE = −1.0 Vdc) 60 − (IC = −100 mAdc, VCE = −1.0 Vdc) 30 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) (NPN) − 0.2 (IC = 50 mAdc, IB = 5.0 mAdc) − 0.3 (IC = −10 mAdc, IB = −1.0 mAdc) (PNP) − −0.25 (IC = −50 mAdc, IB = −5.0 mAdc) − −0.4 Base −Emitter Saturation Voltage VBE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) (NPN) 0.65 0.85 (IC = 50 mAdc, IB = 5.0 mAdc) − 0.95 (IC = −10 mAdc, IB = −1.0 mAdc) (PNP) −0.65 −0.85 (IC = −50 mAdc, IB = −5.0 mAdc) − −0.95
SMALL- SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (NPN) 300 − (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) (PNP) 250 − Output Capacitance Cobo pF (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (NPN) − 4.0 (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) (PNP) − 4.5 Input Capacitance Cibo pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (NPN) − 8.0 (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) (PNP) − 10.0 Input Impedance hie kW (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN) 1.0 10 (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP) 2.0 12 Voltage Feedback Ratio hre X 10−4 (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN) 0.5 8.0 (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP) 0.1 10 Small−Signal Current Gain hfe − (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN) 100 400 (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP) 100 400
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MBT3946DW1T1G, SMBT3946DW1T1G Table 3. ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2) V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) (NPN) 40 − (IC = −1.0 mAdc, IB = 0) (PNP) −40 − Collector−Base Breakdown Voltage V(BR)CBO Vdc (IC = 10 mAdc, IE = 0) (NPN) 60 − (IC = −10 mAdc, IE = 0) (PNP) −40 − Emitter−Base Breakdown Voltage V(BR)EBO Vdc (IE = 10 mAdc, IC = 0) (NPN) 6.0 − (IE = −10 mAdc, IC = 0) (PNP) −5.0 − Base Cutoff Current IBL nAdc (VCE = 30 Vdc, VEB = 3.0 Vdc) (NPN) − 50 (VCE = −30 Vdc, VEB = −3.0 Vdc) (PNP) − −50 Collector Cutoff Current ICEX nAdc (VCE = 30 Vdc, VEB = 3.0 Vdc) (NPN) − 50 (VCE = −30 Vdc, VEB = −3.0 Vdc) (PNP) − −50
ON CHARACTERISTICS
(Note 2) DC Current Gain hFE − (IC = 0.1 mAdc, VCE = 1.0 Vdc) (NPN) 40 − (IC = 1.0 mAdc, VCE = 1.0 Vdc) 70 − (IC = 10 mAdc, VCE = 1.0 Vdc) 100 300 (IC = 50 mAdc, VCE = 1.0 Vdc) 60 − (IC = 100 mAdc, VCE = 1.0 Vdc) 30 − (IC = −0.1 mAdc, VCE = −1.0 Vdc) (PNP) 60 − (IC = −1.0 mAdc, VCE = −1.0 Vdc) 80 − (IC = −10 mAdc, VCE = −1.0 Vdc) 100 300 (IC = −50 mAdc, VCE = −1.0 Vdc) 60 − (IC = −100 mAdc, VCE = −1.0 Vdc) 30 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) (NPN) − 0.2 (IC = 50 mAdc, IB = 5.0 mAdc) − 0.3 (IC = −10 mAdc, IB = −1.0 mAdc) (PNP) − −0.25 (IC = −50 mAdc, IB = −5.0 mAdc) − −0.4 Base −Emitter Saturation Voltage VBE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) (NPN) 0.65 0.85 (IC = 50 mAdc, IB = 5.0 mAdc) − 0.95 (IC = −10 mAdc, IB = −1.0 mAdc) (PNP) −0.65 −0.85 (IC = −50 mAdc, IB = −5.0 mAdc) − −0.95
SMALL- SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (NPN) 300 − (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) (PNP) 250 − Output Capacitance Cobo pF (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (NPN) − 4.0 (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) (PNP) − 4.5 Input Capacitance Cibo pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (NPN) − 8.0 (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) (PNP) − 10.0 Input Impedance hie kW (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN) 1.0 10 (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP) 2.0 12 Voltage Feedback Ratio hre X 10−4 (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN) 0.5 8.0 (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP) 0.1 10 Small−Signal Current Gain hfe − (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN) 100 400 (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP) 100 400
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