Datasheet MBT3946DW1T1G, SMBT3946DW1T1G (ON Semiconductor)
| Fabricante | ON Semiconductor |
| Descripción | Complementary General Purpose Transistor |
| Páginas / Página | 13 / 1 — http://onsemi.com. Features. SOT−363/SC−88. CASE 419B. STYLE 1. … |
| Revisión | 7 |
| Formato / tamaño de archivo | PDF / 251 Kb |
| Idioma del documento | Inglés |
http://onsemi.com. Features. SOT−363/SC−88. CASE 419B. STYLE 1. MBT3946DW1T1*. Table 1. MAXIMUM RATINGS. Rating. Symbol. Value. Unit
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link to page 1 MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT−23/SOT−323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6
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surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium.
Features
•
SOT−363/SC−88
hFE, 100−300
CASE 419B
• Low VCE(sat), ≤ 0.4 V
STYLE 1
• Simplifies Circuit Design • Reduces Board Space (3) (2) (1) • Reduces Component Count • S Prefix for Automotive and Other Applications Requiring Unique Q Q Site and Control Change Requirements; AEC−Q101 Qualified and 1 2 PPAP Capable • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS (4) (5) (6) Compliant
MBT3946DW1T1*
*Q1 PNP
Table 1. MAXIMUM RATINGS
Q2 NPN
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO Vdc
MARKING DIAGRAM
(NPN) 40 (PNP) −40 Collector − Base Voltage VCBO Vdc (NPN) 60 (PNP) −40 46 M G G Emitter−Base Voltage VEBO Vdc (NPN) 6.0 (PNP) −5.0 Collector Current − Continuous IC mAdc (NPN) 200 46 = Specific Device Code (PNP) −200 M = Date Code G = Pb-Free Package Electrostatic Discharge ESD HBM Class 2 MM Class B (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended
ORDERING INFORMATION
Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Device Package Shipping
†
Table 2. THERMAL CHARACTERISTICS
MBT3946DW1T1G SC−88 3,000 / (Pb-Free) Tape & Reel
Characteristic Symbol Max Unit
SMBT3946DW1T1G SC−88 3,000 / Total Package Dissipation (Note 1) PD 150 mW (Pb-Free) Tape & Reel TA = 25°C MBT3946DW1T2G SC−88 3,000 / Thermal Resistance, RqJA 833 °C/W (Pb-Free) Tape & Reel Junction-to-Ambient †For information on tape and reel specifications, Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C including part orientation and tape sizes, please 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum refer to our Tape and Reel Packaging Specifications recommended footprint. Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
July, 2012 − Rev. 7 MBT3946DW1T1/D
http://onsemi.com
surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium.
Features
•
SOT−363/SC−88
hFE, 100−300
CASE 419B
• Low VCE(sat), ≤ 0.4 V
STYLE 1
• Simplifies Circuit Design • Reduces Board Space (3) (2) (1) • Reduces Component Count • S Prefix for Automotive and Other Applications Requiring Unique Q Q Site and Control Change Requirements; AEC−Q101 Qualified and 1 2 PPAP Capable • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS (4) (5) (6) Compliant
MBT3946DW1T1*
*Q1 PNP
Table 1. MAXIMUM RATINGS
Q2 NPN
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO Vdc
MARKING DIAGRAM
(NPN) 40 (PNP) −40 Collector − Base Voltage VCBO Vdc (NPN) 60 (PNP) −40 46 M G G Emitter−Base Voltage VEBO Vdc (NPN) 6.0 (PNP) −5.0 Collector Current − Continuous IC mAdc (NPN) 200 46 = Specific Device Code (PNP) −200 M = Date Code G = Pb-Free Package Electrostatic Discharge ESD HBM Class 2 MM Class B (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended
ORDERING INFORMATION
Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Device Package Shipping
†
Table 2. THERMAL CHARACTERISTICS
MBT3946DW1T1G SC−88 3,000 / (Pb-Free) Tape & Reel
Characteristic Symbol Max Unit
SMBT3946DW1T1G SC−88 3,000 / Total Package Dissipation (Note 1) PD 150 mW (Pb-Free) Tape & Reel TA = 25°C MBT3946DW1T2G SC−88 3,000 / Thermal Resistance, RqJA 833 °C/W (Pb-Free) Tape & Reel Junction-to-Ambient †For information on tape and reel specifications, Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C including part orientation and tape sizes, please 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum refer to our Tape and Reel Packaging Specifications recommended footprint. Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
July, 2012 − Rev. 7 MBT3946DW1T1/D