Datasheet BGS12WN6 (Infineon) - 4
| Fabricante | Infineon |
| Descripción | Wideband SPDT diversity switch with fast switching speed |
| Páginas / Página | 16 / 4 — BGS12WN6. Wideband SPDT diversity switch with fast switching speed. … |
| Revisión | 02_05 |
| Formato / tamaño de archivo | PDF / 1.4 Mb |
| Idioma del documento | Inglés |
BGS12WN6. Wideband SPDT diversity switch with fast switching speed. Absolute maximum ratings. 2 Absolute maximum ratings
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BGS12WN6 Wideband SPDT diversity switch with fast switching speed Absolute maximum ratings 2 Absolute maximum ratings Table 1: Absolute maximum ratings
at TA = 25 ◦C, unless otherwise specified
Parameter Symbol Values Unit Note / Test condition Min. Typ. Max.
Frequency range1) f 0.05 – 9 GHz – Supply voltage VDD 0 – 4.2 V – Storage temperature range TSTG -55 – 150 ◦C – RF input power at all RF ports PRF,max – – 30 dBm CW / VSWR 1:1 / Z0 = 50 Ω ESD capability, CDM2) VESD,CDM -1 – +1 kV – ESD capability, HBM3) VESD,HBM -1 – +1 kV – Each single RF-in/out port ver- -8 – +8 kV sus GND, with 27 nH shunt in- ductor ESD capability RF ports4) VESD,RF Each single RF-in/out port ver- -6 – +6 kV sus GND, with 56 nH shunt in- ductor Junction temperature Tj – – 125 ◦C – Thermal resistance junction - RthJS – – 70 K/W – soldering point Maximum DC-voltage on RF VRFDC 0 – 0 V No DC voltages allowed on RF- ports and RF-Ground Ports 1)There is also a DC connection between switched paths. The DC voltage at RF ports VRFDC has to be 0 V. 2)Field-Induced Charged-Device Model ANSI/ESDA/JEDEC JS-002. Simulates charging/discharging events that occur in production equipment and processes. Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing. 3)Human Body Model ANSI/ESDA/JEDEC JS-001 (R = 1.5 kΩ, C = 100 pF). 4)IEC 61000-4-2 (R = 330 Ω, C = 150 pF), contact discharge.
Attention: Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Exposure to conditions at or below absolute maximum rating but above the specified maximum operation conditions may affect device reliability and life time. Functionality of the device might not be given under these conditions.
Datasheet 3 Revision 2.5 2021-12-21 Document Outline Titlepage 1 Features 2 Absolute maximum ratings 3 Operation ranges 4 RF characteristics 5 Application information 6 Package information
at TA = 25 ◦C, unless otherwise specified
Parameter Symbol Values Unit Note / Test condition Min. Typ. Max.
Frequency range1) f 0.05 – 9 GHz – Supply voltage VDD 0 – 4.2 V – Storage temperature range TSTG -55 – 150 ◦C – RF input power at all RF ports PRF,max – – 30 dBm CW / VSWR 1:1 / Z0 = 50 Ω ESD capability, CDM2) VESD,CDM -1 – +1 kV – ESD capability, HBM3) VESD,HBM -1 – +1 kV – Each single RF-in/out port ver- -8 – +8 kV sus GND, with 27 nH shunt in- ductor ESD capability RF ports4) VESD,RF Each single RF-in/out port ver- -6 – +6 kV sus GND, with 56 nH shunt in- ductor Junction temperature Tj – – 125 ◦C – Thermal resistance junction - RthJS – – 70 K/W – soldering point Maximum DC-voltage on RF VRFDC 0 – 0 V No DC voltages allowed on RF- ports and RF-Ground Ports 1)There is also a DC connection between switched paths. The DC voltage at RF ports VRFDC has to be 0 V. 2)Field-Induced Charged-Device Model ANSI/ESDA/JEDEC JS-002. Simulates charging/discharging events that occur in production equipment and processes. Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing. 3)Human Body Model ANSI/ESDA/JEDEC JS-001 (R = 1.5 kΩ, C = 100 pF). 4)IEC 61000-4-2 (R = 330 Ω, C = 150 pF), contact discharge.
Attention: Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Exposure to conditions at or below absolute maximum rating but above the specified maximum operation conditions may affect device reliability and life time. Functionality of the device might not be given under these conditions.
Datasheet 3 Revision 2.5 2021-12-21 Document Outline Titlepage 1 Features 2 Absolute maximum ratings 3 Operation ranges 4 RF characteristics 5 Application information 6 Package information