Datasheet BGS12WN6 (Infineon) - 3
| Fabricante | Infineon |
| Descripción | Wideband SPDT diversity switch with fast switching speed |
| Páginas / Página | 16 / 3 — BGS12WN6. Wideband SPDT diversity switch with fast switching speed. … |
| Revisión | 02_05 |
| Formato / tamaño de archivo | PDF / 1.4 Mb |
| Idioma del documento | Inglés |
BGS12WN6. Wideband SPDT diversity switch with fast switching speed. Features. 1 Features. Description. Type. Marking. Package
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BGS12WN6 Wideband SPDT diversity switch with fast switching speed Features 1 Features
• Suitable for WIFI, Bluetooth and applications • Fast switching speed • RF CMOS SPDT antenna diversity switch with power handling capability of up to 26 dBm • Low insertion loss and high port to port isolation up to 9 GHz • 0.05 to 9 GHz coverage • High port to port isolation • No blocking capacitors required if no DC applied on RF lines • On-chip control logic • Leadless and halogen free packages PG-TSNP-6-10/-8/-2 with lateral size of 0.7 × 1.1 mm2 and maximum height of 0.375 mm • No power supply decoupling capacitor required • High EMI robustness • RoHS and WEEE compliant package
Description
The BGS12WN6 RF CMOS switch is specifically designed for UWB, WLAN, and Bluetooth applications. Any of the 2 ports can be used as termination of the diversity antenna handling up to 26 dBm. The chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The BGS12WN6 RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 0.7 × 1.1 mm2 and a maximum height of 0.375 mm.
Type Marking Package Ordering information
PG-TSNP-6-10 BGS 12WN6 E6327 BGS12WN6 K PG-TSNP-6-8 BGS 12WN6 E6329 PG-TSNP-6-2 BGS 12WN6 E6329 Datasheet 2 Revision 2.5 2021-12-21 Document Outline Titlepage 1 Features 2 Absolute maximum ratings 3 Operation ranges 4 RF characteristics 5 Application information 6 Package information
• Suitable for WIFI, Bluetooth and applications • Fast switching speed • RF CMOS SPDT antenna diversity switch with power handling capability of up to 26 dBm • Low insertion loss and high port to port isolation up to 9 GHz • 0.05 to 9 GHz coverage • High port to port isolation • No blocking capacitors required if no DC applied on RF lines • On-chip control logic • Leadless and halogen free packages PG-TSNP-6-10/-8/-2 with lateral size of 0.7 × 1.1 mm2 and maximum height of 0.375 mm • No power supply decoupling capacitor required • High EMI robustness • RoHS and WEEE compliant package
Description
The BGS12WN6 RF CMOS switch is specifically designed for UWB, WLAN, and Bluetooth applications. Any of the 2 ports can be used as termination of the diversity antenna handling up to 26 dBm. The chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The BGS12WN6 RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 0.7 × 1.1 mm2 and a maximum height of 0.375 mm.
Type Marking Package Ordering information
PG-TSNP-6-10 BGS 12WN6 E6327 BGS12WN6 K PG-TSNP-6-8 BGS 12WN6 E6329 PG-TSNP-6-2 BGS 12WN6 E6329 Datasheet 2 Revision 2.5 2021-12-21 Document Outline Titlepage 1 Features 2 Absolute maximum ratings 3 Operation ranges 4 RF characteristics 5 Application information 6 Package information