Datasheet C2M0045170D (Wolfspeed) - 7
| Fabricante | Wolfspeed |
| Descripción | Silicon Carbide Power MOSFET 1700 V 72 A 45 mΩ |
| Páginas / Página | 10 / 7 — Typical Performance. Conditions:. J = 25 °C. IDS = 50 A. VDD = 1200 V. … |
| Formato / tamaño de archivo | PDF / 965 Kb |
| Idioma del documento | Inglés |
Typical Performance. Conditions:. J = 25 °C. IDS = 50 A. VDD = 1200 V. ETotal. RG(ext) = 2.5 Ω. VGS = -5V/+20 V. FWD = C2M0045170D
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Typical Performance 8 7 Conditions: Conditions: T 7 J = 25 °C IDS = 50 A VDD = 1200 V 6 VDD = 1200 V IDS = 50 A ETotal RG(ext) = 2.5 Ω 6 VGS = -5V/+20 V VGS = -5V/+20 V FWD = C2M0045170D 5 FWD = C2M0045170D L = 105 μH J) (- - -) FWD = C3D25170H E 5 J) Total L = 105 μH 4 E 4 On EOn E 3 Total 3 itching Loss (m itching Loss (m Sw 2 2 Sw EOn EOff E 1 1 Off EOff 0 0 0 5 10 15 20 25 0 25 50 75 100 125 150 175 External Gate Resistor RG(ext) (Ohms) Junction Temperature, TJ (°C)
Figure 25. Clamped Inductive Switching Energy vs. R Figure 26. Clamped Inductive Switching Energy vs. G(ext) Temperature
160 Conditions: T 140 J = 25 °C VDD = 1200 V IDS = 50 A 120 VGS = -5V/+20 V td(off) FWD = C2M0045170D L = 105 μH 100 es (ns) 80 td(on) Tim 60 tf 40 tr 20 0 0 5 10 15 20 25 External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. R Figure 28. Switching Times Definition G(ext)
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C2M0045170D Rev. -, 06-2016
Figure 25. Clamped Inductive Switching Energy vs. R Figure 26. Clamped Inductive Switching Energy vs. G(ext) Temperature
160 Conditions: T 140 J = 25 °C VDD = 1200 V IDS = 50 A 120 VGS = -5V/+20 V td(off) FWD = C2M0045170D L = 105 μH 100 es (ns) 80 td(on) Tim 60 tf 40 tr 20 0 0 5 10 15 20 25 External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. R Figure 28. Switching Times Definition G(ext)
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C2M0045170D Rev. -, 06-2016