Datasheet C2M0045170D (Wolfspeed)
| Fabricante | Wolfspeed |
| Descripción | Silicon Carbide Power MOSFET 1700 V 72 A 45 mΩ |
| Páginas / Página | 10 / 1 — C2M0045170D. I D@ 25˚C. Silicon Carbide Power MOSFET. DS(on). C2MTM … |
| Formato / tamaño de archivo | PDF / 965 Kb |
| Idioma del documento | Inglés |
C2M0045170D. I D@ 25˚C. Silicon Carbide Power MOSFET. DS(on). C2MTM MOSFET Technology. Features. Package. Benefits. Applications
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V
1700 V
DS C2M0045170D I D@ 25˚C
72 A
R
45 mΩ
Silicon Carbide Power MOSFET DS(on) C2MTM MOSFET Technology
N-Channel Enhancement Mode
Features Package
• High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Resistant to Latch-Up • Halogen Free, RoHS Compliant
Benefits
TO-247-3 • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System Switching Frequency
Applications
• Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC converters • Motor Drive • Pulsed Power Applications
Part Number Package Marking
C2M0045170D TO-247-3 C2M0045170
Maximum Ratings
(T = 25 ˚C unless otherwise specified) C
Symbol Parameter Value Unit Test Conditions Note
VDSmax Drain - Source Voltage 1700 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values, AC (f >1 Hz) VGSop Gate - Source Voltage -5/+20 V Recommended operational values 72 V I GS =20 V, TC = 25˚C Fig. 19 D Continuous Drain Current A 48 VGS =20 V, TC = 100˚C ID(pulse) Pulsed Drain Current 160 A Pulse width tP limited by Tjmax Fig. 22 P Power Dissipation 520 W T =25˚C, T = 150 ˚C Fig. 20 D C J T , T Operating Junction and Storage Temperature -40 to J stg +150 ˚C T Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s L M Nm d Mounting Torque 1 8.8 lbf-in M3 or 6-32 screw
1
C2M0045170D Rev. -, 06-2016
1700 V
DS C2M0045170D I D@ 25˚C
72 A
R
45 mΩ
Silicon Carbide Power MOSFET DS(on) C2MTM MOSFET Technology
N-Channel Enhancement Mode
Features Package
• High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Resistant to Latch-Up • Halogen Free, RoHS Compliant
Benefits
TO-247-3 • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System Switching Frequency
Applications
• Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC converters • Motor Drive • Pulsed Power Applications
Part Number Package Marking
C2M0045170D TO-247-3 C2M0045170
Maximum Ratings
(T = 25 ˚C unless otherwise specified) C
Symbol Parameter Value Unit Test Conditions Note
VDSmax Drain - Source Voltage 1700 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values, AC (f >1 Hz) VGSop Gate - Source Voltage -5/+20 V Recommended operational values 72 V I GS =20 V, TC = 25˚C Fig. 19 D Continuous Drain Current A 48 VGS =20 V, TC = 100˚C ID(pulse) Pulsed Drain Current 160 A Pulse width tP limited by Tjmax Fig. 22 P Power Dissipation 520 W T =25˚C, T = 150 ˚C Fig. 20 D C J T , T Operating Junction and Storage Temperature -40 to J stg +150 ˚C T Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s L M Nm d Mounting Torque 1 8.8 lbf-in M3 or 6-32 screw
1
C2M0045170D Rev. -, 06-2016