Datasheet C2M1000170D (Wolfspeed) - 6

FabricanteWolfspeed
DescripciónSilicon Carbide Power MOSFET 1700 V 5.0 A 1.0 Ω
Páginas / Página10 / 6 — Typical Performance. 120. Conditions:. TJ = 25 °C. T 25 °C. Total. J =. …
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Typical Performance. 120. Conditions:. TJ = 25 °C. T 25 °C. Total. J =. 100. VDD = 1200 V. VDD = 900 V. RG(ext) = 2.5 Ω. ETotal. GS = -5/+20 V

Typical Performance 120 Conditions: TJ = 25 °C T 25 °C Total J = 100 VDD = 1200 V VDD = 900 V RG(ext) = 2.5 Ω ETotal GS = -5/+20 V

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Typical Performance
Figure 19. Continuous Drain Current Derating vs. Figure 20. Maximum Power Dissipation Derating Vs Case Temperature Case Temperature Figure 21. Transient Thermal Impedance Figure 22. Safe Operating Area (Junction - Case)
120 80 Conditions: Conditions: TJ = 25 °C E T 25 °C Total 70 J = 100 VDD = 1200 V VDD = 900 V RG(ext) = 2.5 Ω RG(ext) = 2.5 Ω V ETotal GS = -5/+20 V 60 VGS = -5/+20 V FWD = C2M1000170D FWD = C2M1000170D 80 L = 1738 μH E L = 1738 μH On 50 60 40 E Loss (uJ) On ng itching Loss (uJ) 30 40 itchi Sw Sw 20 20 EOff E 10 Off 0 0 0 1 2 3 4 5 0 1 2 3 4 5 Drain to Source Current, IDS (A) Drain to Source Current, IDS (A)
Figure 23. Clamped Inductive Switching Energy vs. Figure 24. Clamped Inductive Switching Energy vs. Drain Current (V = 1200V) Drain Current (V = 900 V) DD DD
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C2M1000170D Rev. 7, 02-2021