Datasheet C2M1000170D (Wolfspeed) - 7
| Fabricante | Wolfspeed |
| Descripción | Silicon Carbide Power MOSFET 1700 V 5.0 A 1.0 Ω |
| Páginas / Página | 10 / 7 — Typical Performance. 120. Conditions:. TJ = 25 °C. DS = 2 A. DD = 1200 V. … |
| Formato / tamaño de archivo | PDF / 996 Kb |
| Idioma del documento | Inglés |
Typical Performance. 120. Conditions:. TJ = 25 °C. DS = 2 A. DD = 1200 V. ETotal. 100. VDD = 1200 V. Total. G(ext) = 2.5 Ω. GS = -5/+20 V
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Typical Performance 120 Conditions: 120 Conditions: TJ = 25 °C I V DS = 2 A DD = 1200 V ETotal 100 VDD = 1200 V E I Total DS = 2 A 100 R V G(ext) = 2.5 Ω GS = -5/+20 V V -5/+20 V FWD = C2M1000170D E GS = On EOn L = 1738 μH 80 L = 1738 μH 80 FWD = C2M1000170D 60 Loss (uJ) 60 ng itchi 40 itching Loss (uJ) 40 Sw Sw 20 20 EOff EOff 0 0 0 5 10 15 20 25 0 25 50 75 100 125 150 175 External Gate Resistor RG(ext) (Ohms) Junction Temperature, TJ (°C)
Figure 25. Clamped Inductive Switching Energy vs. R Figure 26. Clamped Inductive Switching Energy vs. G(ext) Temperature
100 Conditions: TJ = 25 °C VDD = 1200 V IDS = 2 A 80 VGS = -5/+20 V FWD = C2M1000170D tf es (ns) 60 Tim ng 40 itchi Sw tr 20 td(off) td(on) 0 0 5 10 15 20 25 External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. R Figure 28. Switching Times Definition G(ext)
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C2M1000170D Rev. 7, 02-2021
Figure 25. Clamped Inductive Switching Energy vs. R Figure 26. Clamped Inductive Switching Energy vs. G(ext) Temperature
100 Conditions: TJ = 25 °C VDD = 1200 V IDS = 2 A 80 VGS = -5/+20 V FWD = C2M1000170D tf es (ns) 60 Tim ng 40 itchi Sw tr 20 td(off) td(on) 0 0 5 10 15 20 25 External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. R Figure 28. Switching Times Definition G(ext)
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C2M1000170D Rev. 7, 02-2021