Datasheet C2M1000170D (Wolfspeed) - 5

FabricanteWolfspeed
DescripciónSilicon Carbide Power MOSFET 1700 V 5.0 A 1.0 Ω
Páginas / Página10 / 5 — Typical Performance. VGS = 0 V. GS = 5 V. (A). GS = 0 V. t, I DS. VGS = …
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Idioma del documentoInglés

Typical Performance. VGS = 0 V. GS = 5 V. (A). GS = 0 V. t, I DS. VGS = 10 V. e Curren. GS = 15 V. VGS = 15 V. in-Sourc. GS = 20 V. Dra

Typical Performance VGS = 0 V GS = 5 V (A) GS = 0 V t, I DS VGS = 10 V e Curren GS = 15 V VGS = 15 V in-Sourc GS = 20 V Dra

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Typical Performance -5 -4 -3 -2 -1 0 -5 -4 -3 -2 -1 0 0 0 VGS = 0 V V V GS = 5 V GS = 5 V -1 V (A) GS = 0 V -1 (A) t, I DS t, I DS -2 VGS = 10 V -2 VGS = 10 V e Curren V -3 e Curren GS = 15 V VGS = 15 V -3 in-Sourc V V GS = 20 V GS = 20 V -4 in-Sourc Dra -4 Dra -5 Conditions: T -5 j = -55 °C Conditions: tp < 200 µs Tj = 25 °C -6 Drain-Source Voltage V tp < 200 µs DS (V) -6 Drain-Source Voltage VDS (V)
Figure 13. 3rd Quadrant Characteristic at -55 ºC Figure 14. 3rd Quadrant Characteristic at 25 ºC
-5 -4 -3 -2 -1 0 16 0 VGS = 0 V 14 -1 12 (A) VGS = 5 V (µJ) VGS = 10 V -2 10 t, I DS VGS = 15 V y, E OSS V 8 GS = 20 V -3 e Curren 6 d Energ -4 in-Sourc Store 4 Dra 2 -5 Conditions: Tj = 150 °C 0 tp < 200 µs 0 200 400 600 800 1000 1200 -6 Drain-Source Voltage VDS (V) Drain to Source Voltage, VDS (V)
Figure 15. 3rd Quadrant Characteristic at 150 ºC Figure 16. Output Capacitor Stored Energy
1000 1000 Conditions: Conditions: TJ = 25 °C TJ = 25 °C VAC = 25 mV VAC = 25 mV C f = 1 MHz iss C f = 1 MHz iss 100 100 e (pF) Coss e (pF) Coss Capacitanc 10 C Capacitanc 10 rss Crss 1 1 0 50 100 150 200 0 200 400 600 800 1000 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)
Figure 17. Capacitances vs. Drain-Source Figure 18. Capacitances vs. Drain-Source Voltage (0-200 V) Voltage (0-1000 V)
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C2M1000170D Rev. 7, 02-2021